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ON Semiconductor
| Series | Category | # Parts | Status | Description |
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| Part | Spec A | Spec B | Spec C | Spec D | Description |
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| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
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| Part | Category | Description |
|---|---|---|
 ON Semiconductor | Integrated Circuits (ICs) | SELF-PROTECTED N-CHANNEL POWER MOSFET/ REEL |
 ON Semiconductor 74AC32PCObsolete | Integrated Circuits (ICs) | IC GATE OR 4CH 2-INP 14MDIP |
 ON Semiconductor | Discrete Semiconductor Products | IGBT, 360V, 27A, 1.32V, 320MJ, TO-262<BR>ECOSPARK® I, N-CHANNEL IGNITION |
 ON Semiconductor FAN1655MTFXObsolete | Integrated Circuits (ICs) | IC REG CTRLR DDR 1OUT 16TSSOP |
 ON Semiconductor FIN1027MObsolete | Integrated Circuits (ICs) | LVDS DRIVER, LVDS DIFFERENTIAL DRIVER, -40 °C, 85 °C, 3 V, 3.6 V, SOIC |
 ON Semiconductor | Integrated Circuits (ICs) | PIPELINE REGISTER, 8-BIT PQCC28 |
ON Semiconductor SLV4HC4053ADWRGObsolete | Integrated Circuits (ICs) | LDO REGULATOR, ULTRA-LOW NOISE, |
 ON Semiconductor | Isolators | OPTOCOUPLER, DIP, 6 PINS, 5 KV, NON ZERO CROSSING, 800 V, FOD4218 SERIES |
 ON Semiconductor NVMFD5483NLT1GObsolete | Discrete Semiconductor Products | DUAL N-CHANNEL POWER MOSFET 60V, 24A, 36MΩ |
ON Semiconductor | Discrete Semiconductor Products | BIP NPN 8A 50V |
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
NTMFS022N15MCPower MOSFET, 150V Single N channel 41.9A, 22m Ohm in Power56 package | Discrete Semiconductor Products | 1 | Active | This N-Channel MV MOSFET is produced using advanced PowerTrench®process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode. |
NTMFS034N15MCPower MOSFET, 150V Single N channel 31A, 31m Ohm in Power56 package | Discrete Semiconductor Products | 1 | Active | This N-Channel MV MOSFET is produced using advanced PowerTrench®process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode. |
NTMFS08N003CN‐Channel Shielded Gate PowerTrench<sup>®</sup> MOSFET 80V, 147A, 3.1mΩ | Single FETs, MOSFETs | 2 | Active | This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode. |
NTMFS0D4N04XMPower MOSFET, Single, N-Channel, 40V, 0.42mΩ, 509A, SO8-FL 5x6 | Single FETs, MOSFETs | 1 | Active | The latest 40V standard gate level Power MOSFET Technology with best-in-class On-Resistance for motor driver application. Lower On-Resistance and less gate charge can reduce conduction loss and driving loss. Good softness control for body diode reverse recovery can reduce voltage spike stress without extra snubber circuit in application. |
NTMFS0D5N04XLPower MOSFET, Single, N-Channel, 40V, 0.49mΩ, 455A, SO8-FL 5x6 | Single FETs, MOSFETs | 1 | Active | The latest 40V logic gate level power MOSFET technology with best-in-class Figure-of-Merit for switching application. Lower on-resistance and less ouput capacitance can reduce the conduction and switching loss to accomplish higher efficiency requirement. Smaller peak reverse recovery current with good softness behavior can perform lower voltage spike with better EMI performance. |
NTMFS0D5N04XMPower MOSFET, Single, N-Channel, 40V, 0.52mΩ, 414A, SO8-FL 5x6 | FETs, MOSFETs | 1 | Active | The latest 40V standard gate level Power MOSFET Technology with best-in-class On-Resistance for motor driver application. Lower On-Resistance and less gate charge can reduce conduction loss and driving loss. Good softness control for body diode reverse recovery can reduce voltage spike stress without extra snubber circuit in application. |
NTMFS0D6N04XMPower MOSFET, Single, N-Channel, 40V, 0.57mΩ, 380A, SO8-FL 5x6 | Single FETs, MOSFETs | 1 | Active | The latest 40V standard gate level Power MOSFET Technology with best-in-class On-Resistance for motor driver application. Lower On-Resistance and less gate charge can reduce conduction loss and driving loss. Good softness control for body diode reverse recovery can reduce voltage spike stress without extra snubber circuit in application. |
NTMFS0D7N04XLPower MOSFET, Single, N-Channel, 40V, 0.7mΩ, 349A, SO8-FL 5x6 | Discrete Semiconductor Products | 1 | Active | The latest 40V logic gate level power MOSFET technology with best-in-class Figure-of-Merit for switching application. Lower on-resistance and less output capacitance can reduce the conduction and switching loss to accomplish higher efficiency requirement. Smaller peak reverse recovery current with good softness behavior can perform lower voltage spike with better EMI performance. |
NTMFS0D7N04XMPower MOSFET, Single, N-Channel, 40V, 0.7mΩ, 323A, SO8-FL 5x6 | FETs, MOSFETs | 1 | Active | The latest 40V standard gate level Power MOSFET Technology with best-in-class On-Resistance for motor driver application. Lower On-Resistance and less gate charge can reduce conduction loss and driving loss. Good softness control for body diode reverse recovery can reduce voltage spike stress without extra snubber circuit in application. |
NTMFS0D8N02P1EMOSFET, Power, 25V Single N-Channel, SO-8FL | Transistors | 2 | Active | MOSFET, Power, 30V/±20V N-Channel, 0.7mΩ @ 10V, 409, SO8FL 5x6mm |