NTMFS08N003C Series

N‐Channel Shielded Gate PowerTrench® MOSFET 80V, 147A, 3.1mΩ

Catalog

N‐Channel Shielded Gate PowerTrench® MOSFET 80V, 147A, 3.1mΩ

Part	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Package / Case	Mounting Type	Technology	Drain to Source Voltage (Vdss)	FET Type	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [x]	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id [Max]	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id
ON Semiconductor NTMFS08N003C	5350 pF	22 A 147 A	-55 °C	150 °C	2.7 W 125 W	8-PowerTDFN	Surface Mount	MOSFET (Metal Oxide)	80 V	N-Channel	20 V	73 nC	Power56	6 V 10 V	4 V	3.1 mOhm
ON Semiconductor NTMFS08N004C	4250 pF	126 A	-55 °C	150 °C	125 W	8-PowerTDFN	Surface Mount	MOSFET (Metal Oxide)	80 V	N-Channel	20 V		8-PQFN (5x6) Power56	6 V 10 V		4 mOhm	55 nC	4 V

Catalog

N‐Channel Shielded Gate PowerTrench® MOSFET 80V, 147A, 3.1mΩ

Key Features

• Shielded Gate MOSFET Technology

• Max rDS(on)= 4.0 mΩ at VGS= 10 V, ID= 44 A

• Max rDS(on)= 12.5 mΩ at VGS= 6 V, ID= 22 A

• 50% Lower Qrrthan Other MOSFET Suppliers

• Lowers Switching Noise/EMI

• MSL1 Robust Package Design

• 100% UIL Tested

• RoHS Compliant

Description

This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.