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ON Semiconductor

Series	Category	# Parts	Status	Description

Part	Spec A	Spec B	Spec C	Spec D	Description

Standalone parts(10272)

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Part	Category	Description
ON Semiconductor NCV8402AMNWT1G	Integrated Circuits (ICs)	SELF-PROTECTED N-CHANNEL POWER MOSFET/ REEL
ON Semiconductor 74AC32PCObsolete	Integrated Circuits (ICs)	IC GATE OR 4CH 2-INP 14MDIP
ON Semiconductor FGI3236-F085	Discrete Semiconductor Products	IGBT, 360V, 27A, 1.32V, 320MJ, TO-262<BR>ECOSPARK® I, N-CHANNEL IGNITION
ON Semiconductor FAN1655MTFXObsolete	Integrated Circuits (ICs)	IC REG CTRLR DDR 1OUT 16TSSOP
ON Semiconductor FIN1027MObsolete	Integrated Circuits (ICs)	LVDS DRIVER, LVDS DIFFERENTIAL DRIVER, -40 °C, 85 °C, 3 V, 3.6 V, SOIC
ON Semiconductor TMC2111AR3C	Integrated Circuits (ICs)	PIPELINE REGISTER, 8-BIT PQCC28
ON Semiconductor SLV4HC4053ADWRGObsolete	Integrated Circuits (ICs)	LDO REGULATOR, ULTRA-LOW NOISE,
ON Semiconductor FOD4218V	Isolators	OPTOCOUPLER, DIP, 6 PINS, 5 KV, NON ZERO CROSSING, 800 V, FOD4218 SERIES
ON Semiconductor NVMFD5483NLT1GObsolete	Discrete Semiconductor Products	DUAL N-CHANNEL POWER MOSFET 60V, 24A, 36MΩ
ON Semiconductor 2SD1804S-TL-E	Discrete Semiconductor Products	BIP NPN 8A 50V

Series	Category	# Parts	Status	Description

NTMFS0D9N04XLPower MOSFET, Single, N-Channel, 40V, 0.9mΩ, 278A, SO8-FL 5x6	Single FETs, MOSFETs	1	Active	The latest 40V logic gate level power MOSFET technology with best-in-class Figure-of-Merit for switching application. Lower On-resistance and less output capacitance can reduce the conduction and switching loss to accomplish higher efficiency requirement. Smaller peak reverse recovery current with good softness behavior can perform lower voltage spike with better EMI performance.
NTMFS0D9N04XMPower MOSFET, Single, N-Channel, 40V, 0.9mΩ, 273A, SO8-FL 5x6	Transistors	1	Active	The latest 40V standard gate level Power MOSFET Technology with best-in-class On-Resistance for motor driver application. Lower On-Resistance and less gate charge can reduce conduction loss and driving loss. Good softness control for body diode reverse recovery can reduce voltage spike stress without extra snubber circuit in application.
NTMFS1D15N03CGMOSFET, Power 30V N-Channel, SO8FL	Discrete Semiconductor Products	1	Active	Power MOSFET, 30V N-Channel, 1.15mΩ, 248A, SO8FL 5x6mm
NTMFS1D1N04XMPower MOSFET, Single, N-Channel, 40V, 1.05mΩ, 233A, SO8-FL 5x6	Single FETs, MOSFETs	1	Active	The latest 40V Power MOSFET Technology with best-in-class On-Resistance for motor driver application. Lower On-Resistance and less gate charge can reduce conduction loss and driving loss. Good softness control for body diode reverse recovery can reduce voltage spike stress without extra snubber circuit in application.
NTMFS1D3N04XMPower MOSFET, Single, N-Channel, 40V, 1.3mΩ, 195A, SO8-FL 5x6	Discrete Semiconductor Products	1	Active	The latest 40V Power MOSFET Technology with best-in-class On-Resistance for motor driver application. Lower On-Resistance and less gate charge can reduce conduction loss and driving loss. Good softness control for body diode reverse recovery can reduce voltage spike stress without extra snubber circuit in application.
NTMFS2D1N08XMOSFET - Power, Single, N-Channel, STD Gate. SO8FL-HEFET, 80V, 1.9mΩ, 201 A	Discrete Semiconductor Products	1	Active	MOSFET - Power, Single, N-Channel, STD Gate. SO8FL-HEFET, 80V, 1.9mΩ, 201 A
NTMFS2D3N04XMPower MOSFET, Single N-Channel, SO8FL 40V, 2.35mΩ, 111A	FETs, MOSFETs	1	Active	The latest 40V standard gate level Power MOSFET Technology with best-in-class On-Resistance for motor driver application. Lower On-Resistance and less gate charge can reduce conduction loss and driving loss. Good softness control for body diode reverse recovery can reduce voltage spike stress without extra snubber circuit in application.
NTMFS2D5N08XMOSFET - Power, Single, N-Channel, STD Gate. SO8FL-HEFET, 80V, 2.1mΩ, 181 A	Transistors	1	Active	MOSFET - Power, Single, N-Channel, STD Gate. SO8FL-HEFET, 80V, 2.1mΩ, 181 A
NTMFS3D1N04XMPower MOSFET, Single, N-Channel, SO8FL, 40V, 3.1mΩ, 83A	FETs, MOSFETs	1	Active	The latest 40V standard gate level Power MOSFET Technology with best-in-class On-Resistance for motor driver application. Lower On-Resistance and less gate charge can reduce conduction loss and driving loss. Good softness control for body diode reverse recovery can reduce voltage spike stress without extra snubber circuit in application.
NTMFS3D2N10MDN-Channel Shielded Gate PowerTrench® MOSFET 100V, 142A, 3.2mΩ	Transistors	1	Active	This N-Channel MV MOSFET is produced using an advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with very low Qg and Qoss.