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Product families from NoMIS Power
| Series | Category | Parts | Status | Description |
|---|---|---|---|---|
Parts that are not part of a series
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Parts from NoMIS Power that are not part of a series
| Part Information | Pricing (lowest) | Operating Temperature (Max) | Operating Temperature (Min) | Technology | Current - Continuous Drain (Id) | Vgs (Max) Positive | Vgs (Max) Negative | Drain to Source Voltage (Vdss) | Package Name | Vgs(th) (Max) | Package / Case | Rds On (Max) | Mounting Type | FET Type | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) | Gate Charge (Max) | Channel Count | Configuration - Features | Configuration | Current - Continuous Drain (Id) (Tc) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
NoMIS Power 1200 V 28 MOHM SIC MOSFET TO-247 | Sign in to see pricing | 175 °C | -55 °C | SiCFET (Silicon Carbide) | 72 A | 25 V | -5 V | 1200 V | TO-247-4 | 3 V | TO-247-4 | 35 mOhm | Through Hole | N-Channel | 268 W | 20 V | — | — | — | — | — | — |
 NoMIS Power 1200 V 65 MOHM SIC MOSFET TO-247 | Sign in to see pricing | 175 °C | -55 °C | SiCFET (Silicon Carbide) | 40 A | 25 V | -5 V | 1200 V | TO-247-4 | 3 V | TO-247-4 | 70 mOhm | Through Hole | N-Channel | 174 W | 20 V | — | — | — | — | — | — |
NoMIS Power 1200 V, 35 M SIC MOSFET, TO-247- | Sign in to see pricing | 175 °C | -55 °C | SiCFET (Silicon Carbide) | 76 A | 20 V | -5 V | 1200 V | TO-247-3L | 3 V | TO-247-3 | 45 mOhm | Through Hole | N-Channel | 319 W | 20 V | 2204 pF | 126 nC | — | — | — | — |
NoMIS Power 1200 V, 80 M SIC MOSFET, TO-247- | Sign in to see pricing | 175 °C | -55 °C | SiCFET (Silicon Carbide) | 38 A | 20 V | -5 V | 1200 V | TO-247-3L | 3 V | TO-247-3 | 100 mOhm | Through Hole | N-Channel | 188 W | 20 V | 896 pF, 896 pF | 53 nC | — | — | — | — |
 NoMIS Power 3300 V 80 MOHM SIC MOSFET BARE D | Sign in to see pricing | 175 °C | -55 °C | SiCFET (Silicon Carbide) | 34 A | 25 V | -5 V | 3300 V | TO-247-4 | 3 V | TO-247-4 | 90 mOhm | Through Hole | N-Channel | 288 W | 20 V | — | — | — | — | — | — |
 NoMIS Power 3300 V 80 MOHM SIC MOSFET TO-247 | Sign in to see pricing | 175 °C | -55 °C | SiCFET (Silicon Carbide) | 34 A | 25 V | -5 V | 3300 V | TO-247-4 | 3 V | TO-247-4 | 90 mOhm | Through Hole | N-Channel | 288 W | 20 V | — | — | — | — | — | — |
 NoMIS Power 1200 V, 8 M SIC HALF-BRIDGE POWE | Sign in to see pricing | 175 °C | -55 °C | Silicon Carbide (SiC) | — | — | — | 1200 V | — | 4 V | Module | — | Chassis Mount | — | — | — | — | 530 nC | 2 | Half Bridge | N-Channel | 200 A |