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Discrete Semiconductor Products

N3PT028MP120K

Active
NoMIS Power

1200 V 28 MOHM SIC MOSFET TO-247

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Search across all available documentation for this part.

Discrete Semiconductor Products

N3PT028MP120K

Active
NoMIS Power

1200 V 28 MOHM SIC MOSFET TO-247

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationN3PT028MP120K
Current - Continuous Drain (Id) @ 25°C72 A
Drain to Source Voltage (Vdss)1.2 kV
FET TypeN-Channel
Mounting TypeThrough Hole
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 C
Package / CaseTO-247-4
Power Dissipation (Max)268 W
Rds On (Max) @ Id, Vgs35 mOhm
Supplier Device PackageTO-247-4
Vgs (Max) [Max]25 V
Vgs (Max) [Min]-5 V
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 137$ 31.00

Description

General part information

N3PT028MP120K

1200 V 28 MOHM SIC MOSFET TO-247

Documents

Technical documentation and resources