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Technical Specifications
Parameters and characteristics for this part
| Specification | N3PT028MP120K |
|---|---|
| Current - Continuous Drain (Id) | 72 A |
| Drain to Source Voltage (Vdss) | 1200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 20 V |
| FET Type | N-Channel |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-247-4 |
| Package Name | TO-247-4 |
| Power Dissipation (Max) | 268 W |
| Rds On (Max) | 35 mOhm |
| Technology | SiCFET (Silicon Carbide) |
| Vgs (Max) Negative | -5 V |
| Vgs (Max) Positive | 25 V |
| Vgs(th) (Max) | 3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | Updated |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 31.00 | <4d |
| 10 | $ 28.84 | |||
| 25 | $ 27.30 | |||
| 100 | $ 25.75 | |||
CAD
3D models and CAD resources for this part
Description
General part information
N3PT028MP120K
1200 V 28 MOHM SIC MOSFET TO-247
Documents
Technical documentation and resources