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DocumentsNH3T008MP120F2 | Datasheet
Deep-Dive with AI
DocumentsNH3T008MP120F2 | Datasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | NH3T008MP120F2 |
|---|---|
| Configuration | 2 N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 200 A |
| Drain to Source Voltage (Vdss) | 1.2 kV |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 530 nC |
| Mounting Type | Chassis Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | Module |
| Technology | Silicon Carbide (SiC) |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 6 | $ 149.00 | |
Description
General part information
NH3T008MP120F2
1200 V, 8 M SIC HALF-BRIDGE POWE
Documents
Technical documentation and resources