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NH3T008MP120F2
Discrete Semiconductor Products

NH3T008MP120F2

Active
NoMIS Power

1200 V, 8 M SIC HALF-BRIDGE POWE

NH3T008MP120F2
Discrete Semiconductor Products

NH3T008MP120F2

Active
NoMIS Power

1200 V, 8 M SIC HALF-BRIDGE POWE

Technical Specifications

Parameters and characteristics for this part

SpecificationNH3T008MP120F2
Channel Count2
ConfigurationN-Channel
Configuration - FeaturesHalf Bridge
Current - Continuous Drain (Id) (Tc)200 A
Drain to Source Voltage (Vdss)1200 V
Gate Charge (Max)530 nC
Mounting TypeChassis Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / CaseModule
TechnologySilicon Carbide (SiC)
Vgs(th) (Max)4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyTray 1$ 149.00<4d

CAD

3D models and CAD resources for this part

Description

General part information

NH3T008MP120F2

1200 V, 8 M SIC HALF-BRIDGE POWE

Documents

Technical documentation and resources