N3T080MP120D

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1200 V, 80 M SIC MOSFET, TO-247-

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Discrete Semiconductor Products

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1200 V, 80 M SIC MOSFET, TO-247-

Technical Specifications

Parameters and characteristics for this part

Specification	N3T080MP120D

Current - Continuous Drain (Id) @ 25°C	38 A
Drain to Source Voltage (Vdss)	1.2 kV
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	53 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	896 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	188 W
Supplier Device Package	TO-247-3L
Vgs (Max) [Max]	20 V, -5 V
Vgs(th) (Max) @ Id	3 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	876	$ 8.95

General part information

1200 V, 80 M SIC MOSFET, TO-247-

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