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Technical Specifications
Parameters and characteristics for this part
| Specification | N3T080MP120D |
|---|---|
| Current - Continuous Drain (Id) | 38 A |
| Drain to Source Voltage (Vdss) | 1200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 20 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 53 nC |
| Input Capacitance (Ciss) (Max) | 896 pF, 896 pF |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-247-3 |
| Package Name | TO-247-3L |
| Power Dissipation (Max) | 188 W |
| Rds On (Max) | 100 mOhm |
| Technology | SiCFET (Silicon Carbide) |
| Vgs (Max) Negative | -5 V |
| Vgs (Max) Positive | 20 V |
| Vgs(th) (Max) | 3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | Updated |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 8.95 | <4d |
| 25 | $ 8.45 | |||
| 100 | $ 7.95 | |||
| 500 | $ 6.95 | |||
CAD
3D models and CAD resources for this part
Description
General part information
N3T080MP120D
1200 V, 80 M SIC MOSFET, TO-247-
Documents
Technical documentation and resources