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N3T080MP330K
Discrete Semiconductor Products

N3T080MP330K

Active
NoMIS Power

3300 V 80 MOHM SIC MOSFET TO-247

N3T080MP330K
Discrete Semiconductor Products

N3T080MP330K

Active
NoMIS Power

3300 V 80 MOHM SIC MOSFET TO-247

Technical Specifications

Parameters and characteristics for this part

SpecificationN3T080MP330K
Current - Continuous Drain (Id)34 A
Drain to Source Voltage (Vdss)3300 V
Drive Voltage (Max Rds On, Min Rds On)20 V
FET TypeN-Channel
Mounting TypeThrough Hole
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-247-4
Package NameTO-247-4
Power Dissipation (Max)288 W
Rds On (Max)90 mOhm
TechnologySiCFET (Silicon Carbide)
Vgs (Max) Negative-5 V
Vgs (Max) Positive25 V
Vgs(th) (Max)3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyTube 1$ 59.99<4d
10$ 58.49
25$ 56.99

CAD

3D models and CAD resources for this part

Description

General part information

N3T080MP330K

3300 V 80 MOHM SIC MOSFET TO-247

Documents

Technical documentation and resources