PSMNR56-25YLE Series

N-channel 25 V, 0.63 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56E

Catalog

N-channel 25 V, 0.63 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56E

Part	Operating Temperature [Max]	Operating Temperature [Min]	Rds On (Max) @ Id, Vgs	Technology	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type	FET Type	Supplier Device Package	Power Dissipation (Max)	Package / Case
Nexperia USA Inc. PSMNR56-25YLEX	175 °C	-55 °C	0.63 mOhm	MOSFET (Metal Oxide)	7 V 10 V	190 nC	20 V	320 A	25 V	2.2 V	12137 pF	Surface Mount	N-Channel	LFPAK56 Power-SO8	333 W	SOT-1023 4-LFPAK

Catalog

N-channel 25 V, 0.63 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56E

Description

N-channel enhancement mode ASFET for hotswap with enhanced SOA in LFPAK56E package optimized for low RDSonand strong safe operating area, optimized for hot-swap, inrush and linear-mode applications.