PSMNR58-30YLH Series

N-channel 30 V, 0.67 mΩ, 380 A logic level MOSFET in LFPAK56E using NextPowerS3 technology

Catalog

N-channel 30 V, 0.67 mΩ, 380 A logic level MOSFET in LFPAK56E using NextPowerS3 technology

Part	Package / Case	Rds On (Max) @ Id, Vgs [Max]	Drain to Source Voltage (Vdss)	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Technology	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Supplier Device Package
Nexperia USA Inc. PSMNR58-30YLHX	SOT-1023 4-LFPAK	0.67 mOhm	30 V	N-Channel	6160 pF	MOSFET (Metal Oxide)	20 V	4.5 V 10 V	333 W	175 °C	-55 °C	380 A	2.2 V	188 nC	Surface Mount	LFPAK56 Power-SO8

Catalog

N-channel 30 V, 0.67 mΩ, 380 A logic level MOSFET in LFPAK56E using NextPowerS3 technology

Description

Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56E package optimized for low RDSon. Low IDSSleakage even when hot, high efficiency and high current rated to 380 A, optimized for DC load switch and hot-swap applications.