NGD4300GC Series

4 A peak high-performance dual MOSFET gate driver

Catalog

4 A peak high-performance dual MOSFET gate driver

Part	Supplier Device Package	Channel Type	Mounting Type	Package / Case	Gate Type	Operating Temperature [Max]	Operating Temperature [Min]	Input Type	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Driven Configuration	Number of Drivers	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Voltage - Supply [Min]	Voltage - Supply [Max]
Nexperia USA Inc. NGD4300GCJ	8-WSON (4x4)	Independent	Surface Mount	8-WDFN Exposed Pad	MOSFET (N-Channel)	125 °C	-40 °C	Non-Inverting	3.5 ns	4 ns	Half-Bridge	2	4 A	4 A	8 V	17 V

Catalog

4 A peak high-performance dual MOSFET gate driver

Description

The NGD4300 is a high-performance gate driver designed to drive both high-side and low-side N-channel MOSFETs in a synchronous buck or a half-bridge configuration. The floating high-side driver can work with rail voltages up to 120 V and uses a bootstrap supply with an integrated diode. Both low-side and high-side output drivers have an independent undervoltage lockout (UVLO) circuit which disables the output driver when the driver supply is below its threshold level. The NGD4300 accepts input control signals complying with both TTL and CMOS signaling as low as 2.5 V (±10%). The low voltage, provided by an internal voltage regulator, is used to supply circuitry in signal paths controlling the low-side and high-side power switches. This enables a low-power operation and a better controlled driver performance irrespective of the IC supply voltage.