NGB30T65M3DFP Series

650 V, 50 A trench field-stop IGBT with full rated silicon diode

Catalog

650 V, 50 A trench field-stop IGBT with full rated silicon diode

Part	Vce(on) (Max) @ Vge, Ic	Current - Collector (Ic) (Max) [Max]	Td (on/off) @ 25°C [custom]	Td (on/off) @ 25°C [custom]	Voltage - Collector Emitter Breakdown (Max) [Max]	Reverse Recovery Time (trr)	Package / Case	IGBT Type	Gate Charge	Test Condition	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Switching Energy	Mounting Type	Power - Max [Max]
Nexperia USA Inc. NGB30T65M3DFPJ	1.8 V	56 A	19 ns	139 ns	650 V	115 ns	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Trench Field Stop	81 nC	10 Ohm 15 V 30 A 400 V	D2PAK	175 °C	-40 °C	420 µJ 780 µJ	Surface Mount	199 W

Catalog

650 V, 50 A trench field-stop IGBT with full rated silicon diode

Description

The NGB30T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third⁠-⁠generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGB30T65M3DFP is rated to 175 °C with optimized IGBT turn-off losses, and has a short circuit withstand time of 5 μs. This hard-switching 650 V, 30 A IGBT is optimized for high-voltage, high⁠-⁠frequency industrial power inverter applications and servo motor drive applications.