| Discrete Semiconductor Products | 1 | Active | Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. |
| FETs, MOSFETs | 1 | Active | Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. |
| Single FETs, MOSFETs | 1 | Active | P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. |
| Discrete Semiconductor Products | 1 | Active | N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. |
| Discrete Semiconductor Products | 1 | Active | |
| FET, MOSFET Arrays | 2 | Active | |
BUK9K12-80LDual N-channel 80 V, 12 mOhm logic level MOSFET in LFPAK56D | FET, MOSFET Arrays | 1 | Active | Dual N-channel logic level MOSFET in an LFPAK56D (Dual Power-SO8) package. This product has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications. |
BUK9K13Dual N-channel 60 V, 12.5 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology | Discrete Semiconductor Products | 1 | Active | Dual, logic level N-channel MOSFET in an LFPAK56D package, using Application Specific (ASFET) repetitive avalanche silicon technology. This product has been designed and qualified to AEC-Q101 for use in repetitive avalanche applications. |
BUK9K13-40HDual N-channel 40 V, 13 mOhm logic level MOSFET in LFPAK56D | Discrete Semiconductor Products | 1 | Active | Dual, Logic level N-channel MOSFET in an LFPAK56D package, using Trench 9 TrenchMOS technology. This product has been designed and qualified to AEC-Q101 for use in high performance automotive applications |
| FETs, MOSFETs | 1 | Active | |
