BUK9K13 Series

Dual N-channel 60 V, 12.5 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology

Catalog

Dual N-channel 60 V, 12.5 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology

Part	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Feature	Gate Charge (Qg) (Max) @ Vgs [Max]	Qualification	Mounting Type	Configuration	Drain to Source Voltage (Vdss)	Package / Case	Current - Continuous Drain (Id) @ 25°C	Power - Max [Max]	Rds On (Max) @ Id, Vgs [Max]	Grade	Technology
Nexperia USA Inc. BUK9K13-60RAX	175 °C	-55 °C	LFPAK56D	2.1 V	2953 pF	Logic Level Gate	22.4 nC	AEC-Q101	Surface Mount	2 N-Channel (Dual)	60 V	8-LFPAK56 SOT-1205	40 A	64 W	11.2 mOhm	Automotive	MOSFET (Metal Oxide)

Catalog

Dual N-channel 60 V, 12.5 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology

Description

Dual, logic level N-channel MOSFET in an LFPAK56D package, using Application Specific (ASFET) repetitive avalanche silicon technology. This product has been designed and qualified to AEC-Q101 for use in repetitive avalanche applications.