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60 V, P-channel Trench MOSFET
Description
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P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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60 V, P-channel Trench MOSFET
60 V, P-channel Trench MOSFET
| Part | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Vgs(th) (Max) @ Id | Power Dissipation (Max) | Operating Temperature [Max] | Operating Temperature [Min] | Drain to Source Voltage (Vdss) | FET Type | Package / Case | Technology | Qualification | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) | Grade | Gate Charge (Qg) (Max) @ Vgs [Max] | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 20 V | 713 pF | 2.5 V | 2.3 W 15 W | 175 °C | -55 °C | 60 V | P-Channel | 6-UDFN Exposed Pad | MOSFET (Metal Oxide) | AEC-Q101 | DFN2020MD-6 | 4.5 V 10 V | Automotive | 18 nC | Surface Mount | 3 A 8 A | 120 mOhm |