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40 V, N-channel Trench MOSFET
Description
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N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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40 V, N-channel Trench MOSFET
40 V, N-channel Trench MOSFET
| Part | Package / Case | FET Type | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds [Max] | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Grade | Qualification | Gate Charge (Qg) (Max) @ Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Max] | Operating Temperature [Min] | Mounting Type | Power Dissipation (Max) | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 6-UDFN Exposed Pad | N-Channel | DFN2020MD-6 | 637 pF | 15 V | 4.5 V 10 V | Automotive | AEC-Q101 | 17 nC | 23 mOhm | 2.1 V | 40 V | 8 A | 175 °C | -55 °C | Surface Mount | 15 W | MOSFET (Metal Oxide) |