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Microchip Technology
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| Part | Spec A | Spec B | Spec C | Spec D | Description |
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Beta
⌘K
| Series | Category | # Parts | Status | Description |
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| Part | Spec A | Spec B | Spec C | Spec D | Description |
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| Series | Category | # Parts | Status | Description |
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JANTXV2N4150-TransistorNPN Silicon Power Switching 70V to 120V, 10A | Bipolar (BJT) | 5 | Active | This specification covers the performance requirements for NPN, silicon, low-power, high voltage radiation hardened 2N4150, 2N5237 and 2N5238 transistors. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/394. Two levels of product assurance are provided for each unencapsulated device type (JANHC and JANKC). Provisions for radiation hardness assurance (RHA) to eight radiation levels is provided for JANHC and JANKC product assurance levels. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements. |
JANTXV2N4235L-TransistorPNP Silicon Amplifier -40V to -80V, -1A | Single Bipolar Transistors | 1 | Active | PNP Silicon Amplifier -40V to -80V, -1A |
JANTXV2N4236L-TransistorPNP Silicon Amplifier -40V to -80V, -1A | Bipolar (BJT) | 1 | Active | This specification covers the performance requirements for PNP, silicon, amplifier, 2N4234, 2N4235 and 2N4236 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/580. |
JANTXV2N4449-TransistorNPN Switching 15V to 20V, 0.1A | Discrete Semiconductor Products | 4 | Active | This specification covers the performance requirements for NPN, silicon, high speed switching 2N2369A, 2N3227 and 2N4449 transistors (including dual devices). Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/317 and two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device type. Provisions for radiation hardness assurance (RHA) to two radiation levels ("R" and "F") are provided for JANTXV product assurance level. Provisions for RHA to eight radiation levels are provided for JANS and JANKC. RHA level designators "M", "D", "P", "L", "R", "F’, "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements. |
JANTXV2N5038-TransistorNPN Silicon High-Power 75V to 90V, 20A | Single Bipolar Transistors | 1 | Active | This specification covers the performance requirements for NPN silicon, high-power, 2N5038 and 2N5039 transistors for use in high-speed power-switching applications. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device as specified in MIL-PRF-19500/439. Two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device. |
JANTXV2N5039-TransistorNPN Silicon High-Power 75V to 90V, 20A | Discrete Semiconductor Products | 1 | Active | This specification covers the performance requirements for NPN silicon, high-power, 2N5038 and 2N5039 transistors for use in high-speed power-switching applications. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device as specified in MIL-PRF-19500/439. Two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device. |
JANTXV2N5151L-TransistorPNP Silicon Power -80V, -2A | Single Bipolar Transistors | 6 | Active | This specification covers the performance requirements for PNP, silicon, power, 2N5151 and 2N5153 transistors, complimentary to the 2N5152 and 2N5154 transistors for use in high-speed power-switching applications. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/545 and Two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device type as specified in MIL-PRF-19500/545. Provisions for radiation hardness assurance (RHA) to eight radiation levels ("M", "D", "P", "L," "R", "F", "G", and "H") are provided for JANTXV and JANS product assurance levels. The device package outlines are as follows: similar to TO-205 and and surfacemount U3 for all encapsulated device types. The dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/545. |
JANTXV2N5152-TransistorNPN Silicon Power 80V, 2A | Single Bipolar Transistors | 5 | Active | This specification covers the performance requirements for NPN, silicon, power, 2N5152 and 2N5154 transistors, complimentary to the 2N5151 and 2N5153 transistors for use in high-speed power-switching applications. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device as specified in MIL-PRF-19500/544. Two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device type. Provisions for radiation hardness assurance (RHA) to eight radiation levels ("M", "D", "P", "L", "R", "F", "G", and "H") are provided for JANTXV and JANS product assurance levels. |
JANTXV2N5153-TransistorPNP Silicon Power -80V, -2A | Single Bipolar Transistors | 1 | Active | This specification covers the performance requirements for PNP, silicon, power, 2N5151 and 2N5153 transistors, complimentary to the 2N5152 and 2N5154 transistors for use in high-speed power-switching applications. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/545 and Two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device type as specified in MIL-PRF-19500/545. Provisions for radiation hardness assurance (RHA) to eight radiation levels ("M", "D", "P", "L," "R", "F", "G", and "H") are provided for JANTXV and JANS product assurance levels. |
JANTXV2N5153P-Transistor-PINDPNP Silicon Power -80V, -2A | Discrete Semiconductor Products | 1 | Active | This specification covers the performance requirements for PNP, silicon, power, 2N5151 and 2N5153 transistors, complimentary to the 2N5152 and 2N5154 transistors for use in high-speed power-switching applications. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/545 and Two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device type as specified in MIL-PRF-19500/545. Provisions for radiation hardness assurance (RHA) to eight radiation levels ("M", "D", "P", "L," "R", "F", "G", and "H") are provided for JANTXV and JANS product assurance levels. |
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|---|---|---|
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