| Single Bipolar Transistors | 3 | Active | This specification covers the performance requirements for NPN, silicon, power, 2N5664, 2N5665, 2N5666 and 2N5667 transistors for use in high-speed power-switching applications. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/455. Two levels of product assurance are provided for each un-encapsulated device type as specified in MIL-PRF-19500/455. Provisions for radiation hardness assurance (RHA) to two radiation levels ("R" and "F") are provided for JANTXV and JANHC product assurance level. Provisions for RHA to eight radiation levels are provided for JANS and JANKC product assurance level. RHA level designators; "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices which have passed RHA requirements. The device package for the encapsulated device types are as follows: TO-66, TO-5 and TO-39, and surface mount version U3. The dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/455. |
| Bipolar (BJT) | 4 | Active | This specification covers the performance requirements for NPN, silicon, power, 2N5664, 2N5665, 2N5666 and 2N5667 transistors for use in high-speed power-switching applications. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/455. Two levels of product assurance are provided for each un-encapsulated device type as specified in MIL-PRF-19500/455. Provisions for radiation hardness assurance (RHA) to two radiation levels ("R" and "F") are provided for JANTXV and JANHC product assurance level. Provisions for RHA to eight radiation levels are provided for JANS and JANKC product assurance level. RHA level designators; "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices which have passed RHA requirements. The device package for the encapsulated device types are as follows: TO-66, TO-5 and TO-39, and surface mount version U3. The dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/455. |
| Bipolar (BJT) | 3 | Active | This specification covers the performance requirements for NPN, silicon, high-power, 2N5671 and 2N5672 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/488. The device package outline is a TO–204AA (similar to TO-3) for all encapsulated device types. |
| Bipolar (BJT) | 1 | Active | This specification covers the performance requirements for PNP, silicon, amplifier, 2N5679 and 2N5680 transistors, complimentary to the 2N5681 and 2N5682 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/582 and two levels of product assurance (JANHC and JANKC) are provided for unencapsulated devices. |
| Discrete Semiconductor Products | 1 | Active | This specification covers the performance requirements for PNP silicon, high-power, 2N4399 and 2N5745 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/433. |
| Bipolar (BJT) | 13 | Active | This specification covers the performance requirements for unitized, dual transistors which contains a pair of electrically isolated matched and unmatched NPN, silicon , 2N5793 and 2N5794 Unitized, dual 2N2222A transistors in one package. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/495. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements. |
| Transistors | 7 | Active | This specification covers the performance requirements for two electrically isolated, PNP silicon, 2N5795 and 2N5796 unitized, dual 2N2907A transistors as one dual unit for high speed saturated switching applications. Both matched and unmatched types are covered. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/496. Provisions for radiation hardness assurance (RHA) are provided for JANTXV and JANS product assurance levels. RHA level designators "M", "D", "P", "L", "R", "F", "G" and "H" are appended to the device prefix to identify devices, which have passed RHA requirements. |
| Bipolar (BJT) | 13 | Active | This specification covers the performance requirements for two electrically isolated, PNP silicon, 2N5795 and 2N5796 unitized, dual 2N2907A transistors as one dual unit for high speed saturated switching applications. Both matched and unmatched types are covered. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/496. Provisions for radiation hardness assurance (RHA) are provided for JANTXV and JANS product assurance levels. RHA level designators "M", "D", "P", "L", "R", "F", "G" and "H" are appended to the device prefix to identify devices, which have passed RHA requirements. |
| Discrete Semiconductor Products | 1 | Active | This specification covers the performance requirements for NPN, silicon, power, 2N6032 and 2N6033 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/528. |
| Single Bipolar Transistors | 1 | Active | This specification covers the performance requirements for NPN silicon, power, 2N6274 and 2N6277 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each encapsulated device as specified in MIL-PRF-19500/514. |
