M
Microchip Technology
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Part | Category | Description |
|---|---|---|
Microchip Technology | Crystals Oscillators Resonators | CMOS OUTPUT CLOCK OSCILLATOR, 24MHZ NOM |
Microchip Technology | Crystals Oscillators Resonators | MEMS OSC |
Microchip Technology | Integrated Circuits (ICs) | 1GHZ ARM CORTEX A7 W/ MIPI CAMERA AND 2GB INTEGRATED DDR3L |
Microchip Technology | Discrete Semiconductor Products | DIODE GEN PURP 100V 12A DO203AA |
Microchip Technology MSMBJ5372BLTB | Circuit Protection | VOLTAGE REGULATOR |
Microchip Technology | Integrated Circuits (ICs) | OPERATIONAL AMPLIFIER, 1 CHANNELS, 10 MHZ, 15 V/ΜS, 2.2V TO 5.5V, SOT-23, 5 PINS |
Microchip Technology LE9531CMQCTObsolete | Integrated Circuits (ICs) | IC TELECOM INTERFACE 28QFN |
Microchip Technology MCP2021-330E/MD-AE2VAOObsolete | Integrated Circuits (ICs) | IC TRANSCEIVER |
Microchip Technology | Integrated Circuits (ICs) | MCU 8-BIT PIC16 PIC RISC 3.5KB FLASH 3.3V/5V 18-PIN SOIC W TUBE |
Microchip Technology VCC6-LCF-212M500000Obsolete | Crystals Oscillators Resonators | DIFFERENTIAL XO +3.3 VDC +/-5% L |
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
JANTXV2N3634UB-TransistorPNP Silicon Amplifier -140V, -1A | Single Bipolar Transistors | 2 | Active | This specification covers the performance requirements for PNP, silicon, radiation hardened, low-power amplifier, and switching 2N3634 through 2N3637 transistors. Four levels of product assurance are provided for each encapsulated device (JAN, JANTX, JANTXV and JANS) as specified in MIL-PRF-19500/357 and two levels of product assurance are provided for unencapsulated die (JANHC and JANKC). |
JANTXV2N3635UB-TransistorPNP Silicon Amplifier -140V, -1A | Transistors | 1 | Unknown | This specification covers the performance requirements for PNP, silicon, radiation hardened, low-power amplifier, and switching 2N3634 through 2N3637 transistors. Four levels of product assurance are provided for each encapsulated device (JAN, JANTX, JANTXV and JANS) as specified in MIL-PRF-19500/357 and two levels of product assurance are provided for unencapsulated die (JANHC and JANKC). |
JANTXV2N3636-TransistorPNP Silicon Amplifier -140V, -1A | Discrete Semiconductor Products | 1 | Active | This specification covers the performance requirements for PNP, silicon, radiation hardened, low-power amplifier, and switching 2N3634 through 2N3637 transistors. Four levels of product assurance are provided for each encapsulated device (JAN, JANTX, JANTXV and JANS) as specified in MIL-PRF-19500/357 and two levels of product assurance are provided for unencapsulated die (JANHC and JANKC). |
JANTXV2N3637L-TransistorPNP Silicon Amplifier -140V, -1A | Bipolar (BJT) | 5 | Active | This specification covers the performance requirements for PNP, silicon, radiation hardened, low-power amplifier, and switching 2N3634 through 2N3637 transistors. Four levels of product assurance are provided for each encapsulated device (JAN, JANTX, JANTXV and JANS) as specified in MIL-PRF-19500/357 and two levels of product assurance are provided for unencapsulated die (JANHC and JANKC). |
JANTXV2N3637P-Transistor-PINDPNP Silicon Amplifier -140V, -1A | Bipolar (BJT) | 1 | Active | This specification covers the performance requirements for PNP, silicon, radiation hardened, low-power amplifier, and switching 2N3634 through 2N3637 transistors. Four levels of product assurance are provided for each encapsulated device (JAN, JANTX, JANTXV and JANS) as specified in MIL-PRF-19500/357 and two levels of product assurance are provided for unencapsulated die (JANHC and JANKC). |
JANTXV2N3715-TransistorNPN Silicon High-Power 60V to 80V, 10A | Transistors | 1 | Active | This specification covers the performance requirements for NPN, silicon, high-power 2N3715 and 2N3716 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/408. |
JANTXV2N3737UB-TransistorNPN Silicon Switching 40V, 1.5A | Bipolar (BJT) | 2 | Active | This specification covers the performance requirements for NPN, silicon, switching 2N3735 and 2N3737 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/395. Two levels of product assurance are provided for each unencapsulated device type (JANHC and JANKC). RHA level designators "M", "D", "P", "L", "R", "F", "G" and "H" are appended to the device prefix to identify devices, which have passed RHA requirements. |
JANTXV2N3739-TransistorNPN Silicon Power 300V, 1A | Bipolar (BJT) | 1 | Active | This specification covers the performance requirements for NPN, silicon, power 2N3739 transistors for use in particular power-switching applications. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/402. |
JANTXV2N3766-TransistorNPN Silicon Power 60V to 80V, 4A | Transistors | 2 | Active | This specification covers the performance requirements for NPN silicon, power, 2N3766 and 2N3767 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/518. The device package outline is a TO-213AA. |
JANTXV2N3767P-Transistor-PINDNPN Silicon Power 60V to 80V, 4A | Single Bipolar Transistors | 1 | Active | This specification covers the performance requirements for NPN silicon, power, 2N3766 and 2N3767 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/518. The device package outline is a TO-213AA. |