JANTXV2N5038-Transistor Series

NPN Silicon High-Power 75V to 90V, 20A

Catalog

NPN Silicon High-Power 75V to 90V, 20A

Part	Package / Case	Transistor Type	Qualification	Mounting Type	Vce Saturation (Max) @ Ib, Ic	Grade	Voltage - Collector Emitter Breakdown (Max) [Max]	Power - Max [Max]	Current - Collector (Ic) (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]
Microchip Technology JANTXV2N5038	TO-205AD TO-39-3 Metal Can	NPN	MIL-PRF-19500/439	Through Hole	1 V	Military	90 V	140 W	20 A	50 hFE	1 µA

Catalog

NPN Silicon High-Power 75V to 90V, 20A

Key Features

- The device package outlines are as follows: TO-204AA (TO-3) for all encapsulated device types.

- The dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/439.

Description

This specification covers the performance requirements for NPN silicon, high-power, 2N5038 and 2N5039 transistors for use in high-speed power-switching applications. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device as specified in MIL-PRF-19500/439. Two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device.