JANTXV2N3767P-Transistor-PIND Series

NPN Silicon Power 60V to 80V, 4A

Catalog

NPN Silicon Power 60V to 80V, 4A

Part	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Transistor Type	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]	Mounting Type	Package / Case	Current - Collector Cutoff (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]
Microchip Technology JANTXV2N3767P	25 W	80 V	NPN	2.5 V	4 A	Through Hole	TO-213AA TO-66-2	500 çA	-65 ░C	200 °C	TO-66 (TO-213AA)	40

Catalog

NPN Silicon Power 60V to 80V, 4A

Key Features

- The device package outline is a TO-213AA.

Description

This specification covers the performance requirements for NPN silicon, power, 2N3766 and 2N3767 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/518. The device package outline is a TO-213AA.