JANTXV2N3739-Transistor Series

NPN Silicon Power 300V, 1A

Catalog

NPN Silicon Power 300V, 1A

Part	Vce Saturation (Max) @ Ib, Ic [Max]	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Grade	Mounting Type	Transistor Type	Package / Case	Qualification	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max)
Microchip Technology JANTXV2N3739	2.5 V	1 A	TO-66	100 µA	20 W	-55 °C	200 C	Military	Through Hole	NPN	TO-213AA TO-66-2	MIL-PRF-19500/402	25 hFE	300 V

Catalog

NPN Silicon Power 300V, 1A

Key Features

- The device package for this specification sheet is similar to diamond base case mounted TO-213AA (formerly TO-66) for all packaged device types.

Description

This specification covers the performance requirements for NPN, silicon, power 2N3739 transistors for use in particular power-switching applications. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/402.