JANSR2N7593U3-MOSFET Series

Enhanced N-Channel Radiation-Hardened 250V 12.4A MOSFET

Catalog

Enhanced N-Channel Radiation-Hardened 250V 12.4A MOSFET

Part	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Technology	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Vgs (Max)
Microchip Technology MRH25N12U3	210 mOhm	1980 pF	3-SMD No Lead	N-Channel	-55 °C	150 °C	250 V	50 nC	75 W	12.4 A	MOSFET (Metal Oxide)	12 V 12 V	Surface Mount	20 V

Catalog

Enhanced N-Channel Radiation-Hardened 250V 12.4A MOSFET

Key Features

- Low RDS(on)

- Fast switching

- Single-event hardened

- Low gate charge

- Simple drive

- Ease of paralleling

- Hermetically sealed

- Surface-mount design

- Ceramic package

- Light Weight

Description

Microchip’s new M6 technology has been developed to provide extreme reliability and enhanced radiation hardness for hermetic Power MOSFETs targeted for space and military applications. Microchip Rad-Hard MOSFETs feature low RDS(on) and low total gate charge. The devices have been developed for Total Dose and Single-Event environments. The M6 will perform in extreme-environment applications and will remain within specification in radiation environments up to 300 Krad total ionizing dose (TID). The JANSR2N7593U3 device is designed for the following applications: • DC–DC converters • Motor control • Switch mode power supplies