JANKCC2N6193-Transistor-Die Series

PNP Silicon Switching -100V, -5A

Catalog

PNP Silicon Switching -100V, -5A

Part	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Vce Saturation (Max) @ Ib, Ic	Grade	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Qualification	Current - Collector (Ic) (Max)	Package / Case	Mounting Type	Transistor Type	Supplier Device Package	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]
Microchip Technology JANKCC2N6193	100 µA	1 W	-65 ░C	200 °C	1.2 V	Military	60	MIL-PRF-19500/561	5 A	TO-205AD TO-39-3 Metal Can	Through Hole	PNP	TO-205AD	TO-39	100 V

Catalog

PNP Silicon Switching -100V, -5A

Key Features

- The device packages for the encapsulated device types are as follows: (TO-39) and surface mount (U3).

- The dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/561.

Description

This specification covers the performance requirements for PNP silicon switching, 2N6193 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/561. Two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device type as specified in MIL-PRF-19500/561. Radiation hardness assurance (RHA) level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices which have passed RHA requirements. Provisions for (RHA) to two radiation levels ("R" and "F") are provided for JANTXV product assurance level.