JAN2N4854U-Transistor Series

NPN PNP Silicon Dual Complementary 40V, 0.6A

Catalog

NPN PNP Silicon Dual Complementary 40V, 0.6A

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type	Transistor Type	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Package / Case	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]	Grade	Qualification	Operating Temperature [Min]	Operating Temperature [Max]
Microchip Technology 2N4854U	100	Surface Mount	1 NPN 1 PNP	40 V	400 mV	600 mA	U	6-SMD No Lead	300 mW	10 µA
Microchip Technology JAN2N4854	100	Through Hole	1 NPN 1 PNP	40 V	400 mV	600 mA	TO-78-6	TO-78-6 Metal Can	600 mW	10 µA	Military	MIL-PRF-19500/421
Microchip Technology JAN2N4854U	100	Surface Mount	1 NPN 1 PNP	40 V	400 mV	600 mA	6-SMD	6-SMD No Lead	600 mW	10 A	Military	MIL-PRF-19500/421	-65 °C	200 C
Microchip Technology JANTX2N4854	100	Through Hole	1 NPN 1 PNP	40 V	400 mV	600 mA	TO-78-6	TO-78-6 Metal Can	600 mW	10 µA	Military	MIL-PRF-19500/421

Catalog

NPN PNP Silicon Dual Complementary 40V, 0.6A

Key Features

- The device package outlines are as follows: 6 lead flatpack, TO-78 and surface mount for all encapsulated device types.

Description

This specification covers the performance requirements for unitized, dual 2N3838, 2N4854 and 2N4854U transistors which contain a pair of electrically isolated complementary NPN and PNP silicon triode transistors in one package. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/421.