JAN2N3999-Transistor Series

NPN Silicon High-Speed Power 80V, 10A

Catalog

NPN Silicon High-Speed Power 80V, 10A

Part	Grade	Mounting Type	Power - Max [Max]	Qualification	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Supplier Device Package	Package / Case	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Voltage - Collector Emitter Breakdown (Max) [Max]	Transistor Type
Microchip Technology JANTXV2N3999	Military	Stud Mount	2 W	MIL-PRF-19500/374	80	TO-59	Stud TO-210AA TO-59-4	10 µA	2 V	80 V	NPN
Microchip Technology JAN2N3999	Military	Stud Mount	2 W	MIL-PRF-19500/374	80	TO-59	Stud TO-210AA TO-59-4	10 µA	2 V	80 V	NPN

Catalog

NPN Silicon High-Speed Power 80V, 10A

Key Features

- The device package outlines for the encapsulated device types are as follows: 4 terminal stud (TO-111) package for types 2N3996 and 2N3997 and 3 terminal stud (TO-111) package for types 2N3998 and 2N3999.

Description

This specification covers the performance requirements for NPN silicon, power 2N3996 through 2N3999 transistors for use in high-speed power switching applications. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device as specified in MIL-PRF-19500/374. Two levels of product assurance (JANHC and JANKC) are provided for the unencapsulated die.