Microchip Technology

The Microchip AT28BV64B is a high-performance 64Kbit Parallel EEPROM offering access times to 200ns with 54mW power dissipation and 2.7V supply voltage. Deselected, CMOS standby current is less than 20µA. Access like static RAM for the read or write cycle without external components; it contains a 64-byte page register to allow writing of up to 64 bytes simultaneously. Optional Software Data Protection mechanism guards against inadvertent writes; and an extra 64 bytes of EEPROM enables device identification or tracking.

The Microchip AT28C256 is a high-performance 256Kbit Parallel EEPROM available in both Industrial and Military temp ranges, offering access times to 150ns with power dissipation of 440mW. Deselected, CMOS standby current is less than 200μA. Accessed like static RAM for the read or write cycle without external components, it contains a 64-byte page register to allow writing of up to 64bytes simultaneously. Features an internal Error Correction Circuit for extended endurance and improved data retention, in Military version. Optional Software Data Protection mechanism guards against inadvertent writes; and an extra 64 bytes of EEPROM enables device identification or tracking. The AT28C256 is also available DUAL MARKED where applicable with the appropriate Standard Military Drawing Number - 5962-88525xxxx. See the datasheet for exact MIL product availability.

The Microchip AT28C64B is a high-performance 64Kbit Parallel EEPROM offering access times to 150ns with power dissipation of 220mW. Deselected, CMOS standby current is less than 100µA. Accessed like static RAM for the read or write cycle without external components, it contains a 64-byte page register to allow writing of up to 64 bytes simultaneously. Optional Software Data Protection mechanism guards against inadvertent writes; and an extra 64 bytes of EEPROM enables device identification or tracking.

The Microchip AT28HC256 is a high-performance 256Kbit Parallel EEPROM available in both Industrial and Military temp ranges, offering access times to 70ns with power dissipation of 440mW. Deselected, CMOS standby current is less than 5mA. Accessed like static RAM for the read or write cycle without external components, it contains a 64-byte page register to allow writing of up to 64 bytes simultaneously. Features an internal Error Correction Circuit for extended endurance and improved data retention, in Military version. Optional Software Data Protection mechanism guards against inadvertent writes; and an extra 64 bytes of EEPROM enables device identification or tracking. The AT28HC256 is also available DUAL MARKED where applicable with the appropriate Standard Military Drawing Number - 5962-886340xxx. See the datasheet for exact MIL product availability.

The Microchip AT28HC64BF is a high-performance 64Kbit Parallel EEPROM offering access times to 55ns with power dissipation of 220mW. Deselected, CMOS standby current is less than 100µA. Accessed like static RAM for the read or write cycle without external components, it contains a 64-byte page register to allow writing of up to 64 bytes simultaneously. Optional Software Data Protection mechanism guards against inadvertent writes; and an extra 64 bytes of EEPROM enables device identification or tracking.