AT28BV64B Series

Battery-Voltage 64Kb (8Kbit x 8) Parallel EEPROM with Software Data Protection

Catalog

Battery-Voltage 64Kb (8Kbit x 8) Parallel EEPROM with Software Data Protection

Part	Memory Format	Memory Interface	Technology	Voltage - Supply [Min]	Voltage - Supply [Max]	Mounting Type	Access Time	Memory Organization	Memory Size	Memory Type	Package / Case	Package / Case [x]	Package / Case [y]	Supplier Device Package	Write Cycle Time - Word, Page	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package [y]	Supplier Device Package [x]	Package / Case	Package / Case
Microchip Technology AT28BV64-25SC	EEPROM	Parallel	EEPROM	2.7 V	3.6 V	Surface Mount	250 ns	8 K	64 Kbit	Non-Volatile	28-SOIC	0.295 in	7.5 mm	28-SOIC	3 ms
Microchip Technology AT28BV64B-25SI	EEPROM	Parallel	EEPROM	2.7 V	3.6 V	Surface Mount	250 ns	8 K	64 Kbit	Non-Volatile	28-SOIC	0.295 in	7.5 mm	28-SOIC	10 ms	-40 °C	85 °C
Microchip Technology AT28BV64B-20TU	EEPROM	Parallel	EEPROM	2.7 V	3.6 V	Surface Mount	200 ns	8 K	64 Kbit	Non-Volatile	28-TSSOP	0.465 "	11.8 mm	28-TSOP	10 ms	-40 °C	85 °C
Microchip Technology AT28BV64-30JI	EEPROM	Parallel	EEPROM	2.7 V	3.6 V	Surface Mount	300 ns	8 K	64 Kbit	Non-Volatile	32-LCC (J-Lead)			32-PLCC	3 ms	-40 °C	85 °C	11.43	13.97
Microchip Technology AT28BV64B-20TU-T	EEPROM	Parallel	EEPROM	2.7 V	3.6 V	Surface Mount	200 ns	8 K	64 Kbit	Non-Volatile	28-TSSOP	0.465 "	11.8 mm	28-TSOP	10 ms	-40 °C	85 °C
Microchip Technology AT28BV64-20TI	EEPROM	Parallel	EEPROM	2.7 V	3.6 V	Surface Mount	200 ns	8 K	64 Kbit	Non-Volatile	28-TSSOP	0.465 "	11.8 mm	28-TSOP	3 ms	-40 °C	85 °C
Microchip Technology AT28BV64-25JI	EEPROM	Parallel	EEPROM	2.7 V	3.6 V	Surface Mount	250 ns	8 K	64 Kbit	Non-Volatile	32-LCC (J-Lead)			32-PLCC	3 ms	-40 °C	85 °C	11.43	13.97
Microchip Technology AT28BV64B-20JU-T	EEPROM	Parallel	EEPROM	2.7 V	3.6 V	Surface Mount	200 ns	8 K	64 Kbit	Non-Volatile	32-LCC (J-Lead)			32-PLCC	10 ms	-40 °C	85 °C	11.43	13.97
Microchip Technology AT28BV64B-20TI	EEPROM	Parallel	EEPROM	2.7 V	3.6 V	Surface Mount	200 ns	8 K	64 Kbit	Non-Volatile	28-TSSOP	0.465 "	11.8 mm	28-TSOP	10 ms	-40 °C	85 °C
Microchip Technology AT28BV64-25PC	EEPROM	Parallel	EEPROM	2.7 V	3.6 V	Through Hole	250 ns	8 K	64 Kbit	Non-Volatile	28-DIP			28-PDIP	3 ms					0.6 in	15.24 mm

Catalog

Battery-Voltage 64Kb (8Kbit x 8) Parallel EEPROM with Software Data Protection

Key Features

• + 8 Kbits x 8 (64 Kbit)

• + 2.7V to 3.6V Supply

• + Parallel Interface

• + 200ns access time

• + Self-Timed Erase and Write Cycles (10 ms max)

• + Page Write and Byte Write

• + Data Polling for end of write detection

• + Low Power Consumption

• + Read / Write current 15 mA (Max)

• + Standby current 20 µA (Typ), 50 µA (Max)

• + Write-Protection

• + Hardware Protection

• + Software Data Protect

• + More than 100,000 erase/write cycles

• + Data retention > 10 years

• + Temperature Ranges

• + Standard Temperature Range: -40°C to 85°C

• + Available in Green (Pb/Halide-free) Packaging Only

• + 32-lead, Plastic J-leaded Chip Carrier (PLCC)

• + 28-lead, 0.300" Wide, Plastic Gull Wing Small Outline (SOIC)

• + 28-lead, Plastic Thin Small Outline Package (TSOP)

Description

The Microchip AT28BV64B is a high-performance 64Kbit Parallel EEPROM offering access times to 200ns with 54mW power dissipation and 2.7V supply voltage. Deselected, CMOS standby current is less than 20µA. Access like static RAM for the read or write cycle without external components; it contains a 64-byte page register to allow writing of up to 64 bytes simultaneously. Optional Software Data Protection mechanism guards against inadvertent writes; and an extra 64 bytes of EEPROM enables device identification or tracking.