AT28C040 Series
Manufacturer: Microchip Technology
IC EEPROM 4MBIT PAR 32FLATPACK
| Part | Memory Type | Memory Interface | Voltage - Supply [Min] | Voltage - Supply [Max] | Write Cycle Time - Word, Page | Access Time | Supplier Device Package | Memory Size | Technology | Mounting Type | Memory Format | Memory Organization | Package / Case | Package / Case | Package / Case | Operating Temperature [Min] | Operating Temperature [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microchip Technology | Non-Volatile | Parallel | 4.5 V | 5.5 V | 10 ms | 200 ns | 32-FlatPack Ceramic Bottom-Brazed | 512 kb | EEPROM | Surface Mount | EEPROM | 512 K | 32-CFlatpack | ||||
Microchip Technology | Non-Volatile | Parallel | 4.5 V | 5.5 V | 10 ms | 200 ns | 32-CDIP | 512 kb | EEPROM | Through Hole | EEPROM | 512 K | 32-CDIP | 15.24 mm | 0.6 in | -40 °C | 85 °C |
Microchip Technology | Non-Volatile | Parallel | 4.5 V | 5.5 V | 10 ms | 250 ns | 32-FlatPack Ceramic Bottom-Brazed | 512 kb | EEPROM | Surface Mount | EEPROM | 512 K | 32-CFlatpack | -40 °C | 85 °C | ||
Microchip Technology | Non-Volatile | Parallel | 4.5 V | 5.5 V | 10 ms | 200 ns | 32-FlatPack Ceramic Bottom-Brazed | 512 kb | EEPROM | Surface Mount | EEPROM | 512 K | 32-CFlatpack | -40 °C | 85 °C | ||
Microchip Technology | Non-Volatile | Parallel | 4.5 V | 5.5 V | 10 ms | 250 ns | 32-FlatPack Ceramic Bottom-Brazed | 512 kb | EEPROM | Surface Mount | EEPROM | 512 K | 32-CFlatpack | ||||
Microchip Technology | Non-Volatile | Parallel | 4.5 V | 5.5 V | 10 ms | 250 ns | 44-CLCC (16.55x16.55) | 512 kb | EEPROM | Surface Mount | EEPROM | 512 K | 44-CLCC | -40 °C | 85 °C | ||
Microchip Technology | Non-Volatile | Parallel | 4.5 V | 5.5 V | 10 ms | 250 ns | 32-CDIP | 512 kb | EEPROM | Through Hole | EEPROM | 512 K | 32-CDIP | 15.24 mm | 0.6 in | -40 °C | 85 °C |
Microchip Technology | Non-Volatile | Parallel | 4.5 V | 5.5 V | 10 ms | 200 ns | 44-CLCC (16.55x16.55) | 512 kb | EEPROM | Surface Mount | EEPROM | 512 K | 44-CLCC | ||||
Microchip Technology | Non-Volatile | Parallel | 4.5 V | 5.5 V | 10 ms | 250 ns | 32-CDIP | 512 kb | EEPROM | Through Hole | EEPROM | 512 K | 32-CDIP | 15.24 mm | 0.6 in |