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Microchip Technology
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
Beta
⌘K
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Part | Category | Description |
|---|---|---|
Microchip Technology | Crystals Oscillators Resonators | CMOS OUTPUT CLOCK OSCILLATOR, 24MHZ NOM |
 Microchip Technology | Crystals Oscillators Resonators | MEMS OSC |
 Microchip Technology | Integrated Circuits (ICs) | 1GHZ ARM CORTEX A7 W/ MIPI CAMERA AND 2GB INTEGRATED DDR3L |
 Microchip Technology | Discrete Semiconductor Products | DIODE GEN PURP 100V 12A DO203AA |
 Microchip Technology MSMBJ5372BLTB | Circuit Protection | VOLTAGE REGULATOR |
 Microchip Technology | Integrated Circuits (ICs) | OPERATIONAL AMPLIFIER, 1 CHANNELS, 10 MHZ, 15 V/ΜS, 2.2V TO 5.5V, SOT-23, 5 PINS |
Microchip Technology LE9531CMQCTObsolete | Integrated Circuits (ICs) | IC TELECOM INTERFACE 28QFN |
 Microchip Technology MCP2021-330E/MD-AE2VAOObsolete | Integrated Circuits (ICs) | IC TRANSCEIVER |
 Microchip Technology | Integrated Circuits (ICs) | MCU 8-BIT PIC16 PIC RISC 3.5KB FLASH 3.3V/5V 18-PIN SOIC W TUBE |
Microchip Technology VCC6-LCF-212M500000Obsolete | Crystals Oscillators Resonators | DIFFERENTIAL XO +3.3 VDC +/-5% L |
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
APA600Ultra Low Density FPGAs | Integrated Circuits (ICs) | 14 | Active | The
ProASICPLUS family of devices, combines the advantages of ASICs with the
benefits of programmable devices through nonvolatile flash technology.
Key Features
• Reprogrammable
• Nonvolatile
• Live at power-up
• ASIC design flow
• Very low power
• PLLs and LVPECL I/O |
APA750FPGA, low density FPGA, small package FPGA | Integrated Circuits (ICs) | 9 | Active | The
ProASICPLUS family of devices, combines the advantages of ASICs with the
benefits of programmable devices through nonvolatile flash technology.
Key Features
• Reprogrammable
• Nonvolatile
• Live at power-up
• ASIC design flow
• Very low power
• PLLs and LVPECL I/O |
| Specialty Equipment | 1 | Active | ||
| Evaluation and Demonstration Boards and Kits | 1 | Active | ||
| Single FETs, MOSFETs | 1 | Active | ||
| Rectifiers | 1 | Active | ||
APT100DL60HJ-Module600V/Full bridge/Si Diode modules | Bridge Rectifiers | 1 | Active | * FRED Si diode
* Ultra fast recovery times
* Soft recovery characteristics
* High blocking voltage
* High current
* Low leakage current
* Low stray inductance
* Outstanding performance at high frequency operation
* Low losses
* Direct mounting to heatsink (isolated package)
* Low junction to case thermal resistance
* RoHS Compliant |
APT100GLQ65JU3-Module650V/Buck chopper/IGBT modules | Transistors | 1 | Active | * IGBT 3 fast
* Low voltage drop
* Low leakage current
* Low switching losses
* Kelvin emitter for easy drive
* Low stray inductance
* Stable temperature behavior
* Very rugged
* Direct mounting to heatsink (isolated package)
* Low junction to case thermal resistance
* Internal thermistor for temperature monitoring (optional)
* Easy paralleling due to positive TC of VCEsat
* Low profile
* RoHS Compliant |
| IGBTs | 1 | Active | ||
APT10M11JVRU3-Module100V/Buck chopper/Si Mosfet modules | Transistors | 7 | Active | Power MOS V® can still provide the best trade-off between performance and
cost in some applications. Power MOS V® utilizes a low resistance aluminum
metal gate structure. This allows for faster gate signal propagation than is
possible with conventional polysilicon gate structures. The result is extremely
low internal chip equivalent gate resistances (EGR) that are up to an order of
magnitude lower than competitive devices which enables uniform high speed
switching across the entire chip.
Body
Diode Options
MOSFETs and FREDFETs are available in all voltage ratings. A FREDFET is a
MOSFET with a faster recovery intrinsic body diode. This results in improved
reliability in ZVS circuits due to shorter minority carrier lifetime and
increased commutation dv/dt ruggedness. If a fast recovery body diode is not
needed, MOSFET versions are available. |
