APT10M11JVRU3-Module Series

100V/Buck chopper/Si Mosfet modules

Catalog

100V/Buck chopper/Si Mosfet modules

Part	Mounting Type	Rds On (Max) @ Id, Vgs [Max]	Drain to Source Voltage (Vdss)	FET Type	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Package / Case	Supplier Device Package	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)
Microchip Technology APT10M19SVRG	Surface Mount	19 mOhm	100 V	N-Channel	MOSFET (Metal Oxide)	300 nC	6120 pF	75 A	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA	D3PAK
Microchip Technology APT10M19BVRG	Through Hole	19 mOhm	100 V	N-Channel	MOSFET (Metal Oxide)	300 nC	6120 pF	75 A	TO-247-3	TO-247 [B]
Microchip Technology APT10M09LVFRG	Through Hole	9 mOhm	100 V	N-Channel	MOSFET (Metal Oxide)		9875 pF	100 A	TO-264-3 TO-264AA	TO-264 [L]	4 V	350 nC
Microchip Technology APT10M11JVFR	Chassis Mount		100 V	N-Channel	MOSFET (Metal Oxide)		10380 pF	144 A	SOT-227-4 miniBLOC	ISOTOP®	4 V	450 nC	11 mOhm
Microchip Technology APT10M19SVFRG	Surface Mount	19 mOhm	100 V	N-Channel	MOSFET (Metal Oxide)	300 nC	6120 pF	75 A	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA	D3PAK
Microchip Technology APT10M11JVRU3	Chassis Mount		100 V	N-Channel	MOSFET (Metal Oxide)	300 nC	8600 pF	142 A	SOT-227-4 miniBLOC	SOT-227	4 V		11 mOhm	10 V	450 W	-55 °C	150 °C	30 V
Microchip Technology APT10M25BVRG	Through Hole		100 V	N-Channel	MOSFET (Metal Oxide)	225 nC	5160 pF	75 A	TO-247-3	TO-247 [B]			25 mOhm

Catalog

100V/Buck chopper/Si Mosfet modules

Key Features

• * Class D amplifiers up to 2MHz

• * High voltage pulsed DC

• * AM transmitters

• * Plasma deposition/etch

• * Series Gate Resistance (Rg) <0.1 ohm

• * Tr and Tf times of <10ns

• * Industry's Lowest Gate Charge

• * Fast switching, uniform signal propagation

• * Pulse power applications

• * Fast switching, reduced gate drive power

Description

Power MOS V® can still provide the best trade-off between performance and cost in some applications. Power MOS V® utilizes a low resistance aluminum metal gate structure. This allows for faster gate signal propagation than is possible with conventional polysilicon gate structures. The result is extremely low internal chip equivalent gate resistances (EGR) that are up to an order of magnitude lower than competitive devices which enables uniform high speed switching across the entire chip. Body Diode Options MOSFETs and FREDFETs are available in all voltage ratings. A FREDFET is a MOSFET with a faster recovery intrinsic body diode. This results in improved reliability in ZVS circuits due to shorter minority carrier lifetime and increased commutation dv/dt ruggedness. If a fast recovery body diode is not needed, MOSFET versions are available.