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Microchip Technology
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Part | Category | Description |
|---|---|---|
Microchip Technology | Crystals Oscillators Resonators | CMOS OUTPUT CLOCK OSCILLATOR, 24MHZ NOM |
Microchip Technology | Crystals Oscillators Resonators | MEMS OSC |
Microchip Technology | Integrated Circuits (ICs) | 1GHZ ARM CORTEX A7 W/ MIPI CAMERA AND 2GB INTEGRATED DDR3L |
Microchip Technology | Discrete Semiconductor Products | DIODE GEN PURP 100V 12A DO203AA |
Microchip Technology MSMBJ5372BLTB | Circuit Protection | VOLTAGE REGULATOR |
Microchip Technology | Integrated Circuits (ICs) | OPERATIONAL AMPLIFIER, 1 CHANNELS, 10 MHZ, 15 V/ΜS, 2.2V TO 5.5V, SOT-23, 5 PINS |
Microchip Technology LE9531CMQCTObsolete | Integrated Circuits (ICs) | IC TELECOM INTERFACE 28QFN |
Microchip Technology MCP2021-330E/MD-AE2VAOObsolete | Integrated Circuits (ICs) | IC TRANSCEIVER |
Microchip Technology | Integrated Circuits (ICs) | MCU 8-BIT PIC16 PIC RISC 3.5KB FLASH 3.3V/5V 18-PIN SOIC W TUBE |
Microchip Technology VCC6-LCF-212M500000Obsolete | Crystals Oscillators Resonators | DIFFERENTIAL XO +3.3 VDC +/-5% L |
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
TC4404Dual 1.5 A Open-Drain MOSFET Gate Driver | PMIC | 5 | Active | The TC4404 and TC4405 are CMOS buffer gate drivers constructed with complementary MOS outputs, where the drains of the totem-pole output have been left separated so that individual connections can be made to the pull-up and pull-down sections of the output. This allows the insertion of drain-current-limiting resistors in the pull-up and/or pull-down sections, allowing the user to define the rates of rise and fall for a capacitive load; or a reduced output swing, if driving a resistive load, or to limit base current, when driving a bipolar transistor. Minimum rise and fall times, with no resistors, will be less than 30 ns for a 1,000 pF load. There is no upper limit. For driving MOSFETs in motor-control applications, where slow-ON/fast-OFF operation is desired, these devices are superior to the previously-used technique of adding a diode-resistor combination between the driver output and the MOSFET, because they allow accurate control of turn-ON, while maintaining fast turn-OFF and maximum noise immunity for an OFF device. When used to drive bipolar transistors, these drivers maintain the high speeds common to other Microchip drivers. They allow insertion of a base current-limiting resistor, while providing a separate half-output for fast turn-OFF. By proper positioning of the resistor, either NPN or PNP transistors can be driven. For driving many loads in low-power regimes, these drivers, because they eliminate shoot-through currents in the output stage, require significantly less power at higher frequencies, and can be helpful in meeting low-power budgets. Because neither drain in an output is dependent on the other, these devices can also be used as open-drain buffer/drivers where both drains are available in one device, thus minimizing chip count. Unused open drains should be returned to the supply rail that their device sources are connected to (pull-downs to ground, pull-ups to VDD), to prevent static damage. In addition, in situations where timing resistors or other means of limiting crossover currents are used, like drains may be paralleled for greater current carrying capacity. These devices are built to operate in the most demanding electrical environments. They will not latch up under any conditions within their power and voltage ratings; they are not subject to damage when up to 5 V of noise spiking of either polarity occurs on their ground pin; and they can accept, without damage or logic upset, up to 500 mA of reverse current (of either polarity) being forced back into their outputs. All terminals are fully protected against up to 2 kV of electrostatic discharge. |
TC4405Dual 1.5 A Open-Drain MOSFET Gate Driver | Power Management (PMIC) | 3 | Active | The TC4404 and TC4405 are CMOS buffer gate drivers constructed with complementary MOS outputs, where the drains of the totem-pole output have been left separated so that individual connections can be made to the pull-up and pull-down sections of the output. This allows the insertion of drain-current-limiting resistors in the pull-up and/or pull-down sections, allowing the user to define the rates of rise and fall for a capacitive load; or a reduced output swing, if driving a resistive load, or to limit base current, when driving a bipolar transistor. Minimum rise and fall times, with no resistors, will be less than 30 ns for a 1,000 pF load. There is no upper limit. For driving MOSFETs in motor-control applications, where slow-ON/fast-OFF operation is desired, these devices are superior to the previously-used technique of adding a diode-resistor combination between the driver output and the MOSFET, because they allow accurate control of turn-ON, while maintaining fast turn-OFF and maximum noise immunity for an OFF device. When used to drive bipolar transistors, these drivers maintain the high speeds common to other Microchip drivers. They allow insertion of a base current-limiting resistor, while providing a separate half-output for fast turn-OFF. By proper positioning of the resistor, either NPN or PNP transistors can be driven. For driving many loads in low-power regimes, these drivers, because they eliminate shoot-through currents in the output stage, require significantly less power at higher frequencies, and can be helpful in meeting low-power budgets. Because neither drain in an output is dependent on the other, these devices can also be used as open-drain buffer/drivers where both drains are available in one device, thus minimizing chip count. Unused open drains should be returned to the supply rail that their device sources are connected to (pull-downs to ground, pull-ups to VDD), to prevent static damage. In addition, in situations where timing resistors or other means of limiting crossover currents are used, like drains may be paralleled for greater current carrying capacity. These devices are built to operate in the most demanding electrical environments. They will not latch up under any conditions within their power and voltage ratings; they are not subject to damage when up to 5 V of noise spiking of either polarity occurs on their ground pin; and they can accept, without damage or logic upset, up to 500 mA of reverse current (of either polarity) being forced back into their outputs. All terminals are fully protected against up to 2 kV of electrostatic discharge. |
TC44206 A MOSFET Gate Driver | Gate Drivers | 11 | Active | The TC4420/4429 are 6 A (peak),single output MOSFET gate drivers. The TC4429 is an inverting driver (pin-compatible with the TC429), while the TC4420 is a non-inverting driver. These drivers are fabricated in CMOS for lower power, more efficient operation versus bipolar drivers. Both devices have TTL-compatible inputs, which can be driven as high as VDD + 0.3 V or as low as -5 V without upset or damage to the device. This eliminates the need for external level shifting circuitry and its associated cost and size. The output swing is rail-to-rail ensuring better drive voltage margin, especially during power up/power down sequencing. Propagational delay time is only 55 ns (typical) and the output rise and fall times are only 25 ns (typical) into 2,500 pF across the usable power supply range. Unlike other drivers, the TC4420/4429 are virtually latch-up proof. They replace three or more discrete components saving PCB area, parts and improving overall system reliability. |
TC4421A9 A MOSFET Gate Driver | PMIC | 11 | Active | The TC4421A/TC4422A are improved versions of the earlier TC4421/TC4422 family of single-output MOSFET gate drivers. These devices are high-current buffer/drivers capable of driving large MOSFETs and Insulated Gate Bipolar Transistors (IGBTs). The TC4421A/TC4422A have matched output rise and fall times, as well as matched leading and falling-edge propagation delay times. The TC4421A/TC4422A devices also have very low cross-conduction current, reducing the overall power dissipation of the device.
These devices are essentially immune to any form of upset, except direct overvoltage or over-dissipation. They cannot be latched under any conditions within their power and voltage ratings. These parts are not subject to damage or improper operation when up to 5 V of ground bounce is present on their ground terminals. They can accept, without damage or logic upset, more than 1 A inductive current of either polarity being forced back into their outputs. In addition, all terminals are fully protected against up to 4 kV of electrostatic discharge.
The TC4421A/TC4422A inputs may be driven directly from either TTL or CMOS (3 V to 18 V). In addition, 300 mV of hysteresis is built into the input, providing noise immunity and allowing the device to be driven from slowly rising or falling waveforms. With both surface-mount and pin-through-hole packages, in addition to a wide operating temperature range, the TC4421A/TC4422A family of 9 A MOSFET drivers fit into most any application where high gate/line capacitance drive is required |
TC4422A9 A MOSFET Gate Driver | Power Management (PMIC) | 14 | Active | The TC4421A/TC4422A are improved versions of the earlier TC4421/TC4422 family of single-output MOSFET gate drivers. These devices are high-current buffer/drivers capable of driving large MOSFETs and Insulated Gate Bipolar Transistors (IGBTs). The TC4421A/TC4422A have matched output rise and fall times, as well as matched leading and falling-edge propagation delay times. The TC4421A/TC4422A devices also have very low cross-conduction current, reducing the overall power dissipation of the device.
These devices are essentially immune to any form of upset, except direct overvoltage or over-dissipation. They cannot be latched under any conditions within their power and voltage ratings. These parts are not subject to damage or improper operation when up to 5 V of ground bounce is present on their ground terminals. They can accept, without damage or logic upset, more than 1 A inductive current of either polarity being forced back into their outputs. In addition, all terminals are fully protected against up to 4 kV of electrostatic discharge.
The TC4421A/TC4422A inputs may be driven directly from either TTL or CMOS (3 V to 18 V). In addition, 300 mV of hysteresis is built into the input, providing noise immunity and allowing the device to be driven from slowly rising or falling waveforms. With both surface-mount and pin-through-hole packages, in addition to a wide operating temperature range, the TC4421A/TC4422A family of 9 A MOSFET gate drivers fit into most any application where high gate/line capacitance drive is required. |
TC4423ADual 3 A MOSFET Gate Driver | Power Management (PMIC) | 17 | Active | The TC4423/4424/4425 are higher output current versions of the new TC4426/4427/4428 buffer/gate drivers which, in turn, are improved versions of the earlier TC426/427/428 series. All three families are pin-compatible. The TC4423/4424/4425 gate drivers are capable of giving reliable service in far more demanding electrical environments than their antecedents. Although primarily intended for driving power MOSFETs, the TC4423/4424/4425 gate drivers are equally well-suited to driving any other load (capacitive, resistive, or inductive) which requires a low impedance driver capable of high peak currents and fast switching times. For example, heavily loaded clock lines, coaxial cables, or piezoelectric transducers can all be driven from the TC4423/4424/4425. The only known limitation on loading is the total power dissipated in the driver must be kept within the maximum power dissipation limits of the package. |
TC4424ADual 3 A MOSFET Gate Driver | Power Management (PMIC) | 11 | Active | The TC4423/4424/4425 are higher output current versions of the new TC4426/4427/4428 buffer/gate drivers, which, in turn, are improved versions of the earlier TC426/427/428 series. All three families are pin-compatible. The TC4423/4424/4425 drivers are capable of giving reliable service in far more demanding electrical environments than their antecedents. Although primarily intended for driving power MOSFETs, the TC4423/4424/4425 gate drivers are equally well-suited to driving any other load (capacitive, resistive, or inductive) which requires a low impedance driver capable of high peak currents and fast switching times. For example, heavily loaded clock lines, coaxial cables, or piezoelectric transducers can all be driven from the TC4423/4424/4425. The only known limitation on loading is the total power dissipated in the driver must be kept within the maximum power dissipation limits of the package. |
TC4425ADual 3 A MOSFET Gate Drivers | PMIC | 14 | Active | The TC4423/4424/4425 are higher output current versions of the new TC4426/4427/4428 buffer/gate drivers, which, in turn, are improved versions of the earlier TC426/427/428 series. All three families are pin-compatible. The TC4423/4424/4425 drivers are capable of giving reliable service in far more demanding electrical environments than their antecedents. Although primarily intended for driving power MOSFETs, the TC4423/4424/4425 drivers are equally well-suited to driving any other load (capacitive, resistive, or inductive) which requires a low impedance driver capable of high peak currents and fast switching times. For example, heavily loaded clock lines, coaxial cables, or piezoelectric transducers can all be driven from the TC4423/4424/4425. The only known limitation on loading is the total power dissipated in the driver must be kept within the maximum power dissipation limits of the package. |
TC4426ADual 1.5 A MOSFET Gate Driver | PMIC | 22 | Active | The TC4426/4427/4428 are improved versions of the earlier TC426/427/428 family of buffer/gate drivers (with which they are pin compatible). They will not latch up under any conditions within their power and voltage ratings. They are not subject to damage when up to 5 V of noise spiking (of either polarity) occurs on the ground pin. They can accept, without damage or logic upset, up to 500 mA of reverse current (of either polarity) being forced back into their outputs. All terminals are fully protected against up to 2 kV of electrostatic discharge. As MOSFET gate drivers, the TC4426/4427/4428 can switch 1,000 pF gate capacitances in 25 ns, and provide low enough impedances in both the ON and OFF states to ensure the MOSFETs intended state will not be affected by large transients. However, the recommended pin-compatible drivers are the TC4426A/27A/28A. These gate drivers have matched input to output leading edge and falling edge delays, tD1 and tD2, for processing short duration pulses in the 25 ns range. They are pin compatible with the TC4426/27/28. |
TC4427ADual 1.5 A MOSFET Gate Driver | PMIC | 23 | Active | The TC4426/4427/4428 are improved versions of the earlier TC426/427/428 family of buffer/gate drivers (with which they are pin compatible). They will not latch up under any conditions within their power and voltage ratings. They are not subject to damage when up to 5 V of noise spiking (of either polarity) occurs on the ground pin. They can accept, without damage or logic upset, up to 500 mA of reverse current (of either polarity) being forced back into their outputs. All terminals are fully protected against up to 2 kV of electrostatic discharge. As MOSFET gate drivers, the TC4426/4427/4428 can switch 1,000 pF gate capacitances in 25 ns, and provide low enough impedances in both the ON and OFF states to ensure the MOSFETs intended state will not be affected by large transients. However, the recommended pin-compatible drivers are the TC4426A/27A/28A. These gate drivers have matched input to output leading edge and falling edge delays, tD1 and tD2, for processing short duration pulses in the 25 ns range. They are pin compatible with the TC4426/27/28. |