Microchip Technology

The TC4426A/4427A/4428A are improved versions of the earlier TC426/427/428 family of buffer/gate drivers (with which they are pin compatible). They will not latch up under any conditions within their power and voltage ratings. They are not subject to damage when up to 5 V of noise spiking (of either polarity) occurs on the ground pin. They can accept, without damage or logic upset, up to 500 mA of reverse current (of either polarity) being forced back into their outputs. All terminals are fully protected against up to 4 kV of electrostatic discharge. As MOSFET gate drivers, the TC4426A/4427A/4428A can easily switch 1,000 pF gate capacitances in under 30 ns, and provide low enough impedances in both the ON and OFF states to ensure the MOSFET's intended state will not be affected, even by large transients.

The TC4420/4429 are 6 A (peak),single output MOSFET gate drivers. The TC4429 is an inverting gate driver (pin-compatible with the TC429), while the TC4420 is a non-inverting gate driver. These gate drivers are fabricated in CMOS for lower power, more efficient operation versus bipolar drivers. Both devices have TTL-compatible inputs, which can be driven as high as VDD + 0.3 V or as low as -5 V without upset or damage to the device. This eliminates the need for external level shifting circuitry and its associated cost and size. The output swing is rail-to-rail ensuring better drive voltage margin, especially during power up/power down sequencing. Propagational delay time is only 55 ns (typical) and the output rise and fall times are only 25 ns (typical) into 2,500 pF across the usable power supply range. Unlike other gate drivers, the TC4420/4429 are virtually latch-up proof. They replace three or more discrete components saving PCB area, parts and improving overall system reliability.

The TC4431/4432 are 30 V CMOS buffer/gate drivers suitable for use in high-side driver applications. They will not latch up under any conditions within their power and voltage ratings. They can accept, without damage or logic upset, up to 300 mA of reverse current (of either polarity) being forced back into their outputs. All terminals are fully protected against up to 4 kV of electrostatic discharge. Under-voltage lockout circuitry forces the output to a "low" state when the input supply voltage drops below 7 V. For operation in lower voltages, disable the lockout and start-up circuit by grounding pin 3(LOCK DIS); for all other situations, pin 3 (LOCK DIS) should be left floating. The under-voltage lockout and start-up circuit gives brown out protection when driving MOSFETs.

The TC4431/4432 are 30 V CMOS buffer/gate drivers suitable for use in high-side gate driver applications. They will not latch up under any conditions within their power and voltage ratings. They can accept, without damage or logic upset, up to 300 mA of reverse current (of either polarity) being forced back into their outputs. All terminals are fully protected against up to 4 kV of electrostatic discharge. Under-voltage lockout circuitry forces the output to a "low" state when the input supply voltage drops below 7 V. For operation in lower voltages, disable the lockout and start-up circuit by grounding pin 3(LOCK DIS); for all other situations, pin 3 (LOCK DIS) should be left floating. The under-voltage lockout and start-up circuit gives brown out protection when driving MOSFETs.

The TC4451/52 are single-output MOSFET gate drivers, which are high-current buffer/gate drivers capable of driving large MOSFETs and Insulated Gate Bipolar Transistors (IGBT). Their high drive current of over 12 A is capable of driving some of largest power transistors in use today. The TC4451/2 have matched leading and falling-edge propagation delay times and have very low cross-conduction current to minimize the overall power dissipation of the device. They will not latch up under any conditions within their power and voltage ratings. They are not subject to damage when up to 5 V of noise spiking (of either polarity) occurs on the ground pin. They can accept, without damage or logic upset, more than 1.5 A of reverse current (of either polarity) being forced back into their outputs. Additionally, all terminals are fully protected against up to 4 kV of electrostatic discharge.

The TC4451/52 are single-output MOSFET gate drivers, which are high-current buffer/gate drivers capable of driving large MOSFETs and Insulated Gate Bipolar Transistors (IGBT). Their high drive current of over 13 A is capable of driving some of largest power transistors in use today. The TC4451/2 have matched leading and falling-edge propagation delay times and have very low cross-conduction current to minimize the overall power dissipation of the device. They will not latch up under any conditions within their power and voltage ratings. They are not subject to damage when up to 5 V of noise spiking (of either polarity) occurs on the ground pin. They can accept, without damage or logic upset, more than 1.5 A of reverse current (of either polarity) being forced back into their outputs. Additionally, all terminals are fully protected against up to 4 kV of electrostatic discharge.

The TC446x family of four-output CMOS buffer/gate drivers are an expansion from our earlier single- and dual-output gate drivers. Each gate driver has been equipped with a two-input logic gate for added flexibility. The TC446x gate drivers can source up to 250 mA into loads referenced to ground. Heavily loaded clock lines, coaxial cables, and piezoelectric transducers can all be easily driven with the 446X series gate drivers. The only limitation on loading is that total power dissipation in the IC must be kept within the power dissipation limits of the package. The TC446x series will not latch under any conditions within their power and voltage ratings. They are not subject to damage when up to 5 V of noise spiking (either polarity) occurs on the ground line. They can accept up to half an amp of inductive kickback current (either polarity) into their outputs without damage or logic upset. In addition, all terminals are protected against ESD to at least 2 kV.

The TC446x family of four-output CMOS buffer/gate drivers are an expansion from our earlier single- and dual-output gate drivers. Each gate driver has been equipped with a two-input logic gate for added flexibility. The TC446x gate drivers can source up to 250 mA into loads referenced to ground. Heavily loaded clock lines, coaxial cables, and piezoelectric transducers can all be easily driven with the 446x series gate drivers. The only limitation on loading is that total power dissipation in the IC must be kept within the power dissipation limits of the package. The TC446X series will not latch under any conditions within their power and voltage ratings. They are not subject to damage when up to 5 V of noise spiking (either polarity) occurs on the ground line. They can accept up to half an amp of inductive kickback current (either polarity) into their outputs without damage or logic upset. In addition, all terminals are protected against ESD to at least 2 kV.

The TC4626/4627 are single CMOS high speed gate drivers with an on-board voltage boost circuit. These parts work with an input supply voltage from 4 to 6 V. The internal voltage booster will produce a VBOOST potential up to 12 V above VIN. This VBOOST is not regulated, so its voltage is dependent on the input VDD voltage and output drive loading requirements. An internal under voltage lockout (UVLO) circuit keeps the output in a low state when VBOOST drops below 7.8 V. Output is enabled when VBOOST is above 11.3 V.