| PMIC | 8 | Active | The TC1412/1412N are 2 A CMOS buffer/gate drivers. They will not latch up under any conditions within their power and voltage ratings. They are not subject to damage when up to 5 V of noise spiking of either polarity occurs on the ground pin. They can accept, without damage or logic upset, up to 500 mA of current of either polarity being forced back into their output. All terminals are fully protected against up to 4 kV of electrostatic discharge. As MOSFET drivers, the TC1412/1412N can easily switch 1,000 pF gate capacitance in 18 ns with matched rise and fall times, and provide low enough impedance in both the ON and the OFF states to ensure the MOSFET’s intended state will not be affected, even by large transients. The rise and fall time edges are matched to allow driving short-duration inputs with greater accuracy. |
| Gate Drivers | 8 | Active | The TC1413/1413N are 3 A CMOS buffer/gate drivers. They will not latch up under any conditions within their power and voltage ratings. They are not subject to damage when up to 5 V of noise spiking of either polarity that occurs on the ground pin. They can accept, without damage or logic upset, up to 500mA of current of either polarity being forced back into their output. All terminals are fully protected against up to 4 kV of electrostatic discharge. As MOSFET gate drivers, the TC1413/1413N can easily switch 1,800 pF gate capacitance in 20 ns with matched rise and fall times, and provide low enough impedance in both the ON and the OFF states to ensure the MOSFET’s intended state will not be affected, even by large transients. The rise and fall time edges are matched to allow driving short-duration inputs with greater output accuracy. |
TC1426Dual 1.2 A MOSFET Gate Driver | Integrated Circuits (ICs) | 4 | Active | The TC1426/27/28 are a family of 1.2 A dual high-speed gate drivers. CMOS fabrication is used for low power consumption and high efficiency. These devices are fabricated using an epitaxial layer to effectively short out the intrinsic parasitic transistor responsible for CMOS latch-up. They incorporate a number of other design and process refinements to increase their long-term reliability. The TC1426 is compatible with the bipolar DS0026, but only draws 1/5 of the quiescent current. The TC1426/27/28 are also compatible with the TC426/27/28, but with 1.2 A peak output current rather than the 1.5 A of the TC426/27/28 devices. Other compatible drivers are the TC4426/27/28 and the TC4426A/27A/28A. The TC4426/27/28 have the added feature that the inputs can withstand negative voltage up to 5 V with diode protection circuits. The TC4426A/27A/28A have matched input to output leading edge and falling edge delays, tD1 and tD2, for processing short duration pulses in the 25 ns range. All of the above drivers are pin compatible. The high-input impedance TC1426/27/28 drivers are CMOS/TTL input-compatible, do not require the speed-up needed by the bipolar devices, and can be directly driven by most PWM ICs. This family of devices is available in inverting and non-inverting versions. Specifications have been optimized to achieve low-cost and high-performance devices, well-suited for the high-volume manufacturer. |
TC1427Dual 1.2 A MOSFET Gate Driver | Integrated Circuits (ICs) | 6 | Active | The TC1426/27/28 are a family of 1.2 A dual high- speed gate drivers. CMOS fabrication is used for low power consumption and high efficiency. These devices are fabricated using an epitaxial layer to effectively short out the intrinsic parasitic transistor responsible for CMOS latch-up. They incorporate a number of other design and process refinements to increase their long-term reliability. The TC1426 is compatible with the bipolar DS0026, but only draws 1/5 of the quiescent current. The TC1426/27/28 are also compatible with the TC426/27/28, but with 1.2 A peak output current rather than the 1.5 A of the TC426/27/28 devices. Other compatible drivers are the TC4426/27/28 and the TC4426A/27A/28A. The TC4426/27/28 have the added feature that the inputs can withstand negative voltage up to 5 V with diode protection circuits. The TC4426A/27A/28A have matched input to output leading edge and falling edge delays, tD1 and tD2, for processing short duration pulses in the 25 ns range. All of the above drivers are pin compatible. The high-input impedance TC1426/27/28 drivers are CMOS/TTL input-compatible, do not require the speed-up needed by the bipolar devices, and can be directly driven by most PWM ICs. This family of devices is available in inverting and non-inverting versions. Specifications have been optimized to achieve low-cost and high-performance devices, well-suited for the high-volume manufacturer. |
| Integrated Circuits (ICs) | 5 | Active | |
| Data Acquisition | 6 | Active | |
TC1550N/P-Channel Enhancement-Mode Dual MOSFET | Transistors | 1 | Active | TC1550 consists of a high voltage N-channel and P-channel MOSFET in an 8-Lead SOIC package. This is an enhancement-mode (normally-off) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown.
Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. |
TC201450mA CMOS LDO w/ Shutdown and Vref Bypass | Integrated Circuits (ICs) | 5 | Active | The TC2014, TC2015, and TC2185 are high accuracy (typically ±0.4%) CMOS upgrades for older (bipolar) low dropout regulators such as the LP2980. Total supply current is typically 55µA (20 to 60 times lower than in bipolar regulators). The devices’ key features include ultra low noise operation (plus bypass reference), very low dropout voltage - typically 45mV (TC2014); 90mV (TC2015); and 140mV (TC2185) at full load - and fast response to step changes in load. Supply current is reduced to 0.5µA (max) and VOUT falls to zero when the shutdown input is low. The devices also incorporate over-current protection. The TC2014, TC2015, and TC2185 are stable with an output capacitor of only 1µF and have a maximum output current of 50mA, 100mA, and 150mA, respectively. For higher output versions, see the TC1107, TC1108, and TC1173 (IOUT = 300 mA) data sheets. |
TC2015100mA CMOS LDO with Shutdown and Vref Bypass | Integrated Circuits (ICs) | 7 | Active | The TC2014, TC2015, and TC2185 are high accuracy (typically ±0.4%) CMOS upgrades for older (bipolar) low dropout regulators such as the LP2980. Total supply current is typically 55µA (20 to 60 times lower than in bipolar regulators). The devices’ key features include ultra low noise operation (plus bypass reference), very low dropout voltage - typically 45mV (TC2014); 90mV (TC2015); and 140mV (TC2185) at full load - and fast response to step changes in load. Supply current is reduced to 0.5µA (max) and VOUT falls to zero when the shutdown input is low. The devices also incorporate over-current protection. The TC2014, TC2015, and TC2185 are stable with an output capacitor of only 1µF and have a maximum output current of 50mA, 100mA, and 150mA, respectively. For higher output versions, see the TC1107, TC1108, and TC1173 (IOUT = 300 mA) data sheets. |
| Development Boards, Kits, Programmers | 2 | Active | |
