Microchip Technology

The ARF family of RF power MOSFETs is optimized for applications requiring frequencies as high as 150 MHz and operating voltages as high as 400V. Historically, RF power MOSFETs were limited to applications of 50V or less. This limitation has been removed by combining Microchip’s high-voltage MOSFET technology with RF-specific die geometries. The DRF1300 and DRF1301 have two independent channels, each containing a driver and RF MOSFET in a push-pull configuration. All DRF parts feature a proprietary anti-ring function to eliminate cross conduction in bridge or push-pull topologies. All DRF parts can be externally selected in either an inverting or non-inverting configuration.

The ARF family of RF power MOSFETs is optimized for applications requiring frequencies as high as 150 MHz and operating voltages as high as 400V. Historically, RF power MOSFETs were limited to applications of 50V or less. This limitation has been removed by combining Microchip’s high-voltage MOSFET technology with RF-specific die geometries.

The VRF family of RF MOSFETs includes improved replacements for industry-standard RF transistors. They provide improved ruggedness by increasing the Bvdss over 30 percent from the industry-standard 125V to 170V minimum. Low-cost flangeless packages are another improvement that shows Microchip’s dedication to optimizing performance, reducing cost and improving reliability. We will continue to offer more products with the new reduced cost flangeless packages.

The VRF family of RF MOSFETs includes improved replacements for industry-standard RF transistors. They provide improved ruggedness by increasing the Bvdss over 30 percent from the industry-standard 125V to 170V minimum. Low-cost flangeless packages are another improvement that shows Microchip’s dedication to optimizing performance, reducing cost and improving reliability. We will continue to offer more products with the new reduced cost flangeless packages.

The ARF family of RF power MOSFETs is optimized for applications requiring frequencies as high as 150 MHz and operating voltages as high as 400V. Historically, RF power MOSFETs were limited to applications of 50V or less. This limitation has been removed by combining Microchip’s high-voltage MOSFET technology with RF-specific die geometries.

The VRF family of RF MOSFETs includes improved replacements for industry-standard RF transistors. They provide improved ruggedness by increasing the Bvdss over 30 percent from the industry-standard 125V to 170V minimum. Low-cost flangeless packages are another improvement that shows Microchip’s dedication to optimizing performance, reducing cost and improving reliability. We will continue to offer more products with the new reduced cost flangeless packages.

DRF hybrid RF power amplifier products enable superior power density by integrating RF MOSFETs with gate drivers in a single package with excellent thermal performance. Integration maximizes amplifier performance by minimizing transmission line parasitics between the driver and the MOSFET. Products are offered with the following configurations. * DRF1200, DRF1201, DRF1211: single-ended topology for simplest design * DRF1300, DRF1301, DRF1311: push-pull topology for easy design with outstanding 2nd harmonic suppression * DRF1400: half-bridge topology for higher efficiency and power density * DRF1510: full-bridge topology for most compact, most efficient Class-D RF amplifier in a single package Reference designs are available as a learning tool and development platform to enable minimal time-to-market, including detailed application note, circuit schematics, bill of materials, circuit board layout, theory of operation, and performance data. * DRF1200-CLASS-E: single ended topology, 13.56 MHz * DRF1400-CLASS-D: half-bridge topology, 13.56 MHz * DRF1510-CLASS-D: full-bridge topology, 13.56 MHz