Catalog
RF MOSFET Driver Hybrid
Key Features
• HF power amplifiers from 2-30 MHz, 1-4.5 kW per device, up to 92% efficiency at 13.56 MHz* Class-D, Class-E RF generators
• * Switch-mode power amplifiers
• * Plasma
• * Pulse generators
• * CO2 Lasers
• * Semiconductor capital equipment
• * Flat-panel displays, industrial glass, photovoltaic
• * Induction heating, defrosting, drying
• * Hazardous or toxic gas, waste treatment
• * Lighting
• * Ignition
• * Ultrasonic cavitation
Description
AI
DRF hybrid RF power amplifier products enable superior power density by integrating RF MOSFETs with gate drivers in a single package with excellent thermal performance. Integration maximizes amplifier performance by minimizing transmission line parasitics between the driver and the MOSFET.
Products are offered with the following configurations.
* DRF1200, DRF1201, DRF1211: single-ended topology for simplest design
* DRF1300, DRF1301, DRF1311: push-pull topology for easy design with outstanding 2nd harmonic suppression
* DRF1400: half-bridge topology for higher efficiency and power density
* DRF1510: full-bridge topology for most compact, most efficient Class-D RF amplifier in a single package
Reference designs are available as a learning tool and development platform to enable minimal time-to-market, including detailed application note, circuit schematics, bill of materials, circuit board layout, theory of operation, and performance data.
* DRF1200-CLASS-E: single ended topology, 13.56 MHz
* DRF1400-CLASS-D: half-bridge topology, 13.56 MHz
* DRF1510-CLASS-D: full-bridge topology, 13.56 MHz
