Analog Devices

The ADP8870 combines a programmable backlight LED charge-pump driver with automatic phototransistor control of the brightness (LED current) and a PWM input to control the scale of the output current. This combination allows significant power savings because it automatically changes the current intensity based on the sensed ambient lighting levels and the display image content. It performs this function automatically, eliminating the need for a processor to monitor the phototransistor. The light intensity thresholds are fully programmable via the I2C interface.The ADP8870 allows up to six LEDs to be independently driven up to 30 mA (maximum). An additional seventh LED can be driven to 60 mA (maximum). All LEDs are individually programmable for minimum/maximum current and fade-in/fade-out times through an I2C interface. These LEDs can also be combined into groups to reduce the processor instructions during fade-in and fade-out.Driving these components is a two-capacitor charge pump with gains of 1×, 1.5×, and 2×. This setup is capable of driving a maximum IOUT of 240 mA from a supply of 2.5 V to 5.5 V. A full suite of safety features, including short-circuit, overvoltage, and overtemperature protection, allows easy implementation of a safe and robust design. Additionally, input inrush currents are limited via an integrated soft start combined with controlled input-to-output isolation.ApplicationsMobile display backlightingMobile phone keypad backlightingRGB LED lightingLED indicationGeneral backlighting of small format displays

The ADPA1106 is a gallium nitride (GaN), broadband power amplifier that delivers 46 dBm (40 W) with 56% typical power added efficiency (PAE) across a bandwidth of 2.7 GHz to 3.1 GHz. The ADPA1106 has a gain flatness of ±0.15 dB across the 2.7 GHz to 3.1 GHz frequency range.The ADPA1106 is ideal for pulsed applications such as marine, weather, and military radar.The ADPA1106 comes in a 32-lead, lead frame chip scale package, premolded cavity (LFCSP_CAV) and is specified for operation from −40°C to +85°C.APPLICATIONSWeather radarMarine radarMilitary radar

The ADPA1107 is a gallium nitride (GaN), broadband power amplifier, delivering 45.0 dBm (35 W) with 56.5% typical power added efficiency (PAE) across a bandwidth of 4.8 GHz to 6.0 GHz. The ADPA1107 provides ±0.5 dB gain flatness from 5.4 GHz to 6.0 GHz.The ADPA1107 is ideal for pulsed applications such as radar, public mobile radio, and general-purpose amplification.The ADPA1107 is housed in a 40-lead, 6 mm × 6 mm, lead frame chip scale package (LFCSP).APPLICATIONSWeather radarsMarine radarsMilitary radars

The ADPA1113 is a gallium nitride (GaN), broadband power amplifier delivering 46.5 dBm (44.7 W) with 39.0% power added efficiency (PAE) from 2.3 GHz to 5.7 GHz. No external matching or AC-coupling are required to achieve full-band operation. Additionally, no external inductor is required to bias the amplifier.The ADPA1113 is ideal for continuous wave applications, such as military jammers and radars.APPLICATIONSMilitary jammersCommercial and military radarsTest and measurement equipment

The ADPA7001CHIPS is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), balanced medium power amplifier, with an integrated temperature compensated on-chip power detector that operates from 50 GHz to 95 GHz. In the lower band of 50 GHz to 70 GHz, the ADPA7001CHIPS provides 14.5 dB (typical) of gain, 25.5 dBm output third-order intercept (OIP3), and 17 dBm of output power for 1 dB gain compression. In the upper band of 70 GHz to 90 GHz, the ADPA7001CHIPS provides 14 dB (typical) of gain, 25 dBm output IP3, and 17.5 dBm of output power for 1 dB gain compression. The ADPA7001CHIPS requires 350 mA from a 3.5 V supply. The ADPA7001CHIPS amplifier inputs/outputs are internally matched to 50 Ω, facilitating integration into multichip modules (MCMs). All data is taken with the chip connected via one 0.076 mm (3 mil) ribbon bond of 0.076 mm (3 mil) minimal length.ApplicationsTest instrumentationMilitary and spaceTelecommunications infrastructure

ADPA7005AEHZThe ADPA7005 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), 32 dBm saturated output power (PSAT), >1 W, power amplifier, with an integrated temperature compensated, on-chip power detector that operates between 18 GHz and 44 GHz. The ADPA7005 provides 15.5 dB of small signal gain and approximately 32 dBm of PSATat 32 GHz from a 5 V supply (see Figure 26 in the data sheet). The ADPA7005 has an output IP3 of 40 dBm between 24 GHz to 34 GHz and is ideal for linear applications such as electronic countermeasure and instrumentation applications requiring >30 dBm of efficient PSAT. The RF input and outputs are internally matched and dc blocked for ease of integration into higher level assemblies. The ADPA7005 is packaged in a 7 mm × 7 mm, 18‑terminal ceramic leadless chip carrier with heat sink (LCC_HS) that exhibits low thermal resistance and is compatible with surface-mount manufacturing techniques.ADPA7005CHIPThe ADPA7005CHIP is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), distributed power amplifier that operates from 20 GHz to 44 GHz. The amplifier provides 17 dB of small signal gain, 30.5 dBm output power for 1 dB compression (P1dB), and a typical output third-order intercept (IP3) of 41 dBm. The ADPA7005CHIP requires 1200 mA from a 5 V supply on the supply voltage (VDD) and features inputs and outputs that are internally matched to 50 Ω, facilitating integration into multichip modules (MCMs). All data is taken with the chip connected via two 0.025 mm wire bonds that are at least 0.31 mm long.ApplicationsMilitary and spaceTest instrumentationCommunications

The ADPA7006CHIP is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), distributed power amplifier that operates from 18 GHz to 44 GHz. The amplifier provides 23.5 dB of small signal gain, 29 dBm output power for 1 dB compression, and a typical output third-order intercept of 38 dBm. The ADPA7006CHIP requires 800 mA from a 5 V supply on the supply voltage (VDD), and features inputs and outputs that are internally matched to 50 Ω, facilitating integration in multichip modules (MCMs). All data is taken with the chip connected via two 0.025 mm wire bonds that are less than 0.31 mm long.ApplicationsMilitary and spaceTest instrumentationCommunications

The ADPA7008CHIP is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), 31 dBm saturated output power (1 W) distributed power amplifier that operates from 20 GHz to 54 GHz. The amplifier provides a gain of 18 dB, an output power for 1 dB compression (P1dB) of 30.5 dBm, and a typical output third-order intercept (IP3) of 38 dBm at 22 GHz to 42 GHz. The ADPA7008CHIP requires 1500 mA from a 5 V supply voltage (VDD) and features inputs and outputs that are internally matched to 50 Ω, facilitating integration into multichip modules (MCMs). All data is taken with the RFIN and RFOUT pads connected via one 0.076 mm (3 mil) ribbon bond of 0.076 mm (3 mil) minimal length.APPLICATIONSMilitary and spaceTest instrumentationSatellite communications