Catalog
2 GHz to 6 GHz, 46 dBm (40 W), GaN Power Amplifier
Key Features
• Internally matched and AC-coupled, 40 W, GaN power amplifier
• Integrated drain bias inductor
• POUT: 46.5 dBm typical from 2.0 GHz to 5.7 GHz (PIN= 21 dBm)
• Small signal gain: 40.5 dB typical from 2.3 GHz to 5.7 GHz
• Power gain: 25.5 dB typical from 2.0 GHz to 5.7 GHz (PIN = 21 dBm)
• PAE: 39% typical from 2.3 GHz to 5.7 GHz
• VDD= 28 V at IDQ = 750 mA
• 14-lead ceramic leaded chip carrier [LDCC] with a copper-molybdenum base
Description
AI
The ADPA1113 is a gallium nitride (GaN), broadband power amplifier delivering 46.5 dBm (44.7 W) with 39.0% power added efficiency (PAE) from 2.3 GHz to 5.7 GHz. No external matching or AC-coupling are required to achieve full-band operation. Additionally, no external inductor is required to bias the amplifier.The ADPA1113 is ideal for continuous wave applications, such as military jammers and radars.APPLICATIONSMilitary jammersCommercial and military radarsTest and measurement equipment