ADPA7006 Series

18 GHz to 44 GHz, GaAs, pHEMT, MMIC, 1/2 W Power Amplifier

Catalog

18 GHz to 44 GHz, GaAs, pHEMT, MMIC, 1/2 W Power Amplifier

Part	Package / Case	RF Type	Gain	Frequency [Max]	Frequency [Min]	Voltage - Supply [Max]	Voltage - Supply [Min]	Noise Figure	Mounting Type	P1dB	Test Frequency [Min]	Test Frequency [Max]	Supplier Device Package	Supplied Contents	For Use With/Related Products	Type
Analog Devices ADPA7006AEHZ-R7	16-CLCC Exposed Pad	General Purpose	22.5 dB	44 GHz	18 GHz	5 V	4 V	4.5 dB	Surface Mount	29 dBm	24 GHz	34 GHz	16-CLCC-HS (6x6)
Analog Devices ADPA7006-EVALZ				44 GHz	18 GHz									Board(s)	ADPA7006	Amplifier
Analog Devices ADPA7006CHIP	Die	General Purpose	23 dBi	44 GHz	18 GHz	5 V	4 V	5 dB	Surface Mount	29 dBm	28 GHz	36 GHz	Die

Catalog

18 GHz to 44 GHz, GaAs, pHEMT, MMIC, 1/2 W Power Amplifier

Key Features

• Output P1dB: 29 dBm

• PSAT: 29.5 dBm

• Gain: 23.5 dB

• Output IP3: 38 dBm

• Supply voltage: 5 V at 800 mA

• Integrated power detector

• 50 Ω matched input/output

• Die size: 2.750 mm × 1.805 mm × 0.102 mm

Description

The ADPA7006CHIP is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), distributed power amplifier that operates from 18 GHz to 44 GHz. The amplifier provides 23.5 dB of small signal gain, 29 dBm output power for 1 dB compression, and a typical output third-order intercept of 38 dBm. The ADPA7006CHIP requires 800 mA from a 5 V supply on the supply voltage (VDD), and features inputs and outputs that are internally matched to 50 Ω, facilitating integration in multichip modules (MCMs). All data is taken with the chip connected via two 0.025 mm wire bonds that are less than 0.31 mm long.ApplicationsMilitary and spaceTest instrumentationCommunications