ADPA7008 Series
20 GHz to 54 GHz, GaAs, pHEMT, MMIC, 31 dBm (1 W) Power Amplifier
Manufacturer: Analog Devices
Catalog
20 GHz to 54 GHz, GaAs, pHEMT, MMIC, 31 dBm (1 W) Power Amplifier
Key Features
• Output P1dB: 30.5 dBm typical at 22 GHz to 42 GHz
• PSAT: 31 dBm typical at 22 GHz to 42 GHz
• Gain: 18 dB typical at 22 GHz to 42 GHz
• Input return loss: 22 dB typical at 22 GHz to 42 GHz
• Output return loss: 23 dB typical at 22 GHz to 42 GHz
• Output IP3: 38 dBm typical at 22 GHz to 42 GHz
• Supply voltage: 5 V typical at 1500 mA
• 50 Ω matched input and output
• Die size: 3.610 mm × 3.610 mm × 0.102 mm
• Output P1dB: 30 dBm typical at 22 GHz to 40 GHz
• PSAT: 31 dBm typical at 22 GHz to 40 GHz
• Gain: 17.5 dB typical at 22 GHz to 40 GHz
• Input return loss: 12 dB typical at 22 GHz to 40 GHz
• Output return loss: 9.5 dB typical at 22 GHz to 40 GHz
• Output IP3: 37 dBm typical at 22 GHz to 40 GHz
• Supply voltage: 5 V typical at 1500 mA
• 50 Ω matched input and output
• 18-terminal, 7 mm × 7 mm, ceramic leadless chip carrier with heat sink [LCC_HS]
• Integrated power detector
Description
AI
The ADPA7008CHIP is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), 31 dBm saturated output power (1 W) distributed power amplifier that operates from 20 GHz to 54 GHz. The amplifier provides a gain of 18 dB, an output power for 1 dB compression (P1dB) of 30.5 dBm, and a typical output third-order intercept (IP3) of 38 dBm at 22 GHz to 42 GHz. The ADPA7008CHIP requires 1500 mA from a 5 V supply voltage (VDD) and features inputs and outputs that are internally matched to 50 Ω, facilitating integration into multichip modules (MCMs). All data is taken with the RFIN and RFOUT pads connected via one 0.076 mm (3 mil) ribbon bond of 0.076 mm (3 mil) minimal length.APPLICATIONSMilitary and spaceTest instrumentationSatellite communications