Analog Devices Inc./Maxim Integrated

The HMC1063LP3E is a compact I/Q MMIC mixer in a leadless "Pb free" SMT package, which can be used as either an Image Reject Mixer or a Single Sideband Upconverter. The mixer utilizes two standard Hittite double balanced mixer cells and a 90 degree hybrid fabricated in a GaAs Schottky diode process. A low frequency quadrature hybrid was used to produce a 1000 MHz LSB IF output. This product is a much smaller alternative to hybrid style Image Reject Mixers and Single Sideband Upconverter assemblies. The HMC1063LP3E eliminates the need for wire bonding and allows the use of surface mount manufacturing techniques.APPLICATIONSPoint-to-Point andPoint-to-Multi-Point RadioMilitary Radar, EW & ELINTSatellite CommunicationsSensors

The HMC1065LP4E is a compact GaAs MMIC Image Reject Low Noise Converter in a leadless RoHS compliant SMT package. This device provides a small signal conversion gain of 13 dB with 17 dBc of image rejection, and -2 dBm Input IP3. The HMC1065LP4E utilizes an RF LNA followed by an I/Q mixer which is driven by an active X2 multiplier. IF1 and IF2 mixer outputs are provided and an external 90° hybrid is needed to select the required sideband. The I/Q mixer topology reduces the need for filtering of the unwanted sideband. The HMC1065LP4E is a much smaller alternative to hybrid style image reject downconverter assemblies and it eliminates the need for wire bonding by allowing the use of surface mount manufacturing techniques.APPLICATIONSPoint-to-Point & Point-to-Multi-Point RadioSatellite CommunicationsSensors

The HMC1068 is a broadband distributed amplifier optimized for time-domain performance with high bandwidth supporting data-rates up to 32Gbps. The output signal amplitude and cross point are adjustable through the control pins and the integrated peak detector feature is used for monitoring the output voltage signal levels during device's normal operation.The HMC1068 is designed in GaAs MMIC PHEMT process and the device can support wide supply (Vdd) voltage range from 3.3V to 7V with excellent performance, which gives the system designers the flexibility to further optimize the power consumption of the device by settings the supply voltage to its optimum value depending on the output voltage requirements.HMC1068 performance is optimized for operating as a pre-stage amplifier in a cascaded configuration when HMC1069 is used as post-stage driver.The HMC1068 comes in a small die size and need minimal number of external components for decoupling only, which makes it well suited for driver integrated optical modulator chip-and-wire module assemblies..ApplicationsUp to 32Gbps optical modulator driverTest and Measurement InstrumentationMicrowave Radio & VSATMilitary & SpaceUp to 32Gbps pre-driver or receiver block

The HMC1069 is a broadband distributed amplifier optimized for time-domain performance with high bandwidth supporting data-rates up to 32Gbps.The output signal amplitude and cross point are adjustable through the control pins and the integrated peak detector feature is used for monitoring the output voltage signal levels during device's normal operation.The HMC1069 is designed in GaAs MMIC PHEMT process and the device can support supply (Vdd) voltage range from 5V to 7V with excellent performance.HMC1069 can be used as a post-stage driver in cascaded configuration when HMC1068 is utilized as pre-stage amplifier. HMC1069 can also be used as a single-stage driver to address aplications with lowoutput swing requirements.The HMC1069 comes in a small die size and need minimal number of external components for decoupling only , which makes it well suited for driver integrated optical modulator chip-and-wire assemblies.ApplicationsUp to 32Gbps optical modulator driverTest and Measurement InstrumentationMicrowave Radio & VSATMilitary & Space

The HMC1081 is a double balanced mixer. It can be used as an upconverter or a downconverter, with DC to 26 GHz at the IF port and 50 to 75 GHz at the RF port. This passive MMIC mixer is fabricated with GaAs Shottky diode technology. All bond pads and the die backside are Ti/Au metallized and the Shottky devices are fully passivated for reliable operation. All data shown herein is measured with the chip in a 50Ω environment and contacted with RF probes.APPLICATIONSE-Band Communications SystemsTest Equipment & SensorsMilitary End-UseAutomotive Radar

The HMC1082CHIP is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), driver amplifier that operates from 5.5 GHz to 18 GHz. The HMC1082CHIP provides a typical gain of 24 dB, 36 dBm output IP3, and 25.5 dBm of output power for 1 dB compression, requiring only 220 mA from a 5 V supply voltage. The saturated output power (PSAT) is 26 dBm with 24% power added efficiency (PAE).The HMC1082CHIP is an ideal driver amplifier for a wide range of applications including point to point radios from 5.5 GHz to 18 GHz and marine radars at 9 GHz. The HMC1082CHIP can also be used for 6 GHz to 18 GHz EW and ECM applications.APPLICATIONSSoftware defined radiosElectronics warfare (EW)Radar applicationsElectronic countermeasures (ECMs)

The HMC1084 is a broadband reflective GaAs MESFET SP4T switch in a compact 4 × 4 mm ceramic package. Covering 23 - 30 GHz, this switch offers high isolation and low insertion loss. The HMC1084 is controlled with 0/-3V logic, exhibits fast switching speed and consumes much less DC current than pin diode based solutions. With its compact form factor, the HMC1084 is ideal for microwave radio as well as SATCOM and sensor applications. The HMC1084 is housed in a leadless 4 × 4 mm SMT package which is compatible with surface mount manufacturing techniques.APPLICATIONSTelecom InfrastructureMicrowave Radio & VSATMilitary & Space HybridsTest InstrumentationSATCOM & Sensors

The HMC1086 is a 25W Gallium Nitride (GaN) Power Amplifier MMIC which operates between 2 and 6 GHz. The amplifier typically provides 22 dB of small signal gain, +44.5 dBm of saturated output power, and +48 dBm output IP3 at +33 dBm output power per tone. The HMC1086 draws 1100 mA quiescent current from a +28V DC supply. The RF I/Os are DC blocked and matched to 50 Ohms for ease of integration into Multi-Chip-Modules (MCM). All electrical performance data was acquired with die eutectically attached to 1.02 mm (40 mil) thick CuMo carrier with multiple 1.0 mil diameter ball bonds connecting the die to 50 Ohm transmission lines on alumina.ApplicationsTest InstrumentationGeneral CommunicationsRadar