ADRF5162High Power, 100 W Peak, Silicon SPDT, Reflective Switch, 0.4 GHz to 8 GHz | RF and Wireless | 1 | Active | The ADRF5162 is a reflective, single pole double-throw (SPDT) switch manufactured in the silicon process.The ADRF5162 operates from 0.4 GHz to 8 GHz with typical insertion loss of 0.6 dB and typical isolation of 45 dB. The device has a radio frequency (RF) input power handling capability of 45.5 dBm average power and 50 dBm peak power for the insertion loss path.The ADRF5162 draws a low current of 130 μA on the positive supply of +3.3 V and 500 μA on negative supply of −3.3 V. The device employs complementary metal-oxide semiconductor (CMOS)-/low-voltage transistor to transistor logic (LVTTL)-compatible controls. The ADRF5162 requires no additional driver circuitry, which makes it an ideal alternative to GaN and PIN diode-based switches.The ADRF5162 comes in a 24-lead, 4.0 mm × 4.0 mm, RoHS-compliant, lead frame chip scale package (LFCSP) package and can operate from −40°C to +105°C.APPLICATIONSMilitary radios, radars, and electronic counter measuresCellular infrastructureTest and instrumentationGaN and PIN diode replacement |
ADRF52500.1 GHz to 6 GHz Silicon SP5T Switch | RF Switches | 3 | Active | The ADRF5250 is a general-purpose, single-pole, five-throw (SP5T), nonreflective switch manufactured using a silicon process. The ADRF5250 is available in a 4 mm × 4 mm, 24-lead lead frame chip scale package (LFCSP) and provides high isolation and low insertion loss from 100 MHz to 6 GHz.The ADRF5250 incorporates a negative voltage generator to operate with a single positive supply voltage from 3.3 V to 5 V applied to the VDD pin when the VSS pin is connected to ground. The negative voltage generator can be disabled when an external negative supply voltage of −3.3 V is applied to the VSS pin. The ADRF5250 provides a 1.8 V logic-compatible, 3-pin control interface.ApplicationsCellular/4G infrastructureWireless infrastructureMobile radiosTest equipment |
| RF and Wireless | 2 | Active | |
| Development Boards, Kits, Programmers | 4 | Active | |
ADRF5347High Linearity, Silicon SP4T Switch, 1.8 GHz to 3.8 GHz | RF and Wireless | 3 | Active | The ADRF5347 is a high linearity, reflective, single-pole, four-throw (SP4T) switch manufactured in the silicon process.The ADRF5347 operates from 1.8 GHz to 3.8 GHz with a typical insertion loss lower than 0.42 dB and a typical input IP3 of 84 dBm. The device has an RF input power handling capability of 39 dBm for continuous wave signals and 39 dBm average and 49 dBm peak for long-term evolution (LTE) signals.The ADRF5347 draws a current of 2.5 mA on the positive supply of +5.0 V and 0.4 mA on the negative supply of −3.4 V. The device employs low voltage complementary metal-oxide semiconductor (LVCMOS)-/low voltage transistor-to-transistor logic (LVTTL)- compatible controls.The ADRF5347 comes in a 4 mm × 4 mm, 20-terminal, RoHS-compliant, land grid array (LGA) package and operates between −40°C to +105°C.Excellent return loss and IP3 enable ADRF5347 to be used in back-to-back configuration for phase shifting architectures. See the Back-to-Back Phase Shifter Reference Design section for more information.APPLICATIONS5G antenna tilting and beamformingWireless infrastructureMilitary and high reliability applicationsTest equipmentPin diode replacement |
| RF Front End (LNA + PA) | 3 | Active | |
ADRF5519Dual-Channel, 2.3 GHz to 2.8 GHz, 20 W Receiver Front End | RF Front End (LNA + PA) | 3 | Active | The ADRF5519 is a dual-channel, integrated RF, front-end multichip module designed for time division duplexing (TDD) applications that operates from 2.3 GHz to 2.8 GHz. The ADRF5519 is configured in dual channels with a cascading two stage low noise amplifier (LNA) and a high power silicon single pole, double-throw (SPDT) switch.In high gain mode, the cascaded two-stage LNA and switch offer a low noise figure (NF) of 1.0 dB and a high gain of 35 dB at 2.6 GHz with an output third-order intercept point (OIP3) of 32 dBm (typical). In low gain mode, one stage of the two-stage LNA is in bypass, providing 14 dB of gain at a lower current of 36 mA. In power-down mode, the LNAs are turned off and the device draws 12 mA.In transmit operation, RF inputs are connected to a termination pin (ANT-CHA or ANT-CHB connected to TERM-CHA or TERM-CHB, respectively). The switch provides a low insertion loss of 0.5 dB and handles a long-term evolution (LTE) average power (9 dB peak to average ratio (PAR)) of 43 dBm for full lifetime operation.The device comes in a RoHS-compliant, compact, 6 mm × 6 mm, 40-lead LFCSP package.APPLICATIONSWireless infrastructureTDD massive multiple input and multiple output and active antenna systemsTDD-based communication systems |
ADRF55322.3 GHz to 2.7 GHz, Receiver Front End | RF and Wireless | 3 | Active | The ADRF5532 is an integrated RF, front-end multichip module designed for time division duplex (TDD) applications. The device operates from 2.3 GHz to 2.7 GHz. The ADRF5532 is configured with a low-noise amplifier (LNA) and a high-power, silicon, single pole double throw (SPDT) switch.In the receive operation at 2.6 GHz, the LNA offers a low noise figure (NF) of 1.2 dB and a high gain of 35.5 dB with a third order input intercept point (IIP3) of −4 dBm.In the transmit operation, the switch provides a low insertion loss of 0.7 dB and handles a long-term evolution (LTE) average power of 36.5 dBm for a full lifetime operation (8 dB peak to average ratio (PAR)) and 39 dBm for a single event (<10 sec) LNA protection operation.The device is featured in an RoHS compliant, compact, 5 mm × 3 mm, 24-lead LFCSP package.APPLICATIONSWireless infrastructureTDD massive multiple input and multiple output (MIMO) and active antenna systemsTDD-based communication systems |
| RF and Wireless | 3 | Active | |
ADRF5545Dual-Channel, 2.4 GHz to 4.2 GHz Receiver Front End | Development Boards, Kits, Programmers | 4 | Active | The ADRF5545A is a dual-channel, integrated radio frequency (RF), front-end multichip module designed for time division duplexing (TDD) applications that operates from 2.4 GHz to 4.2 GHz. The ADRF5545A is configured in dual channels with a cascading two-stage low noise amplifier (LNA) and a high power silicon single-pole, double-throw (SPDT) switch.In high gain mode, the cascaded two-stage LNA and switch offer a low noise figure (NF) of 1.45 dB and a high gain of 32 dB at 3.6 GHz with an output third-order intercept point (OIP3) of 32 dBm (typical). In low gain mode, one stage of the two-stage LNA is in bypass, providing 16 dB of gain at a lower current of 36 mA. In power-down mode, the LNAs are turned off and the device draws 12 mA.In transmit operation, when RF inputs are connected to a termination pin (TERM-ChA or TERM-ChB), the switch provides a low insertion loss of 0.65 dB and handles long-term evolution (LTE) average power (9 dB peak to average ratio (PAR)) of 40 dBm for full lifetime operation and 43 dBm for single event (<10 sec) LNA protection operation.The device comes in an RoHS compliant, compact, 6 mm × 6 mm, 40-lead LFCSP package.ApplicationsWireless infrastructureTDD massive multiple input and multiple output and active antenna systemsTDD-based communication systems |
