| RF and Wireless | 2 | Active | |
ADRF5050Nonreflective, Silicon SP4T Switch, 100 MHz to 20 GHz | RF Switches | 2 | Active | The ADRF5050 is a nonreflective SP4T switch manufactured in a silicon on insulator (SOI) process. The ADRF5050 operates from 100 MHz to 20 GHz with insertion loss less than 1.20 dB and isolation higher than 47 dB. The device has RF input power handling capability of 33 dBm for through paths.The ADRF5050 operates with a dual-supply voltage +3.3 V and −3.3 V. The device can also operate with a single positive supply voltage (VDD) applied while the negative supply pin (VSS) is tied to ground. The single-supply operation condition requires lower operating power while the excellent small signal performance is maintained (see Table 2 in the data sheet).The ADRF5050 employs complimentary metal-oxide semiconductor (CMOS)- and low voltage transistor to transistor logic (LVTTL)-compatible controls. The device has enable and logic select controls to feature all off state and port mirroring, respectively.The ADRF5050 is pin compatible with the ADRF5042 and ADRF5043.The ADRF5050 comes in a 24-terminal, 3 mm × 3 mm, RoHS compliant, land grid array (LGA) package and can operate from −40°C to +105°C.APPLICATIONSTest instrumentationMilitary radios, radars, and electronic counter measures (ECMs)Microwave radios and very small aperture terminals (VSATs) |
ADRF50541 GHz to 60 GHz, Reflective, Silicon SP4T Switch | RF Switches | 2 | Active | The ADRF5054 is a reflective, SP4T switch manufactured in a silicon process. The ADRF5054 operates from 1 GHz to 60 GHz. The switch has a low insertion loss of 2.2 dB and 3.2 dB with 33 dB and 28 dB isolation at 40 GHz and 60 GHz, respectively. The ADRF5054 has an RF input power handling capability of 24 dBm for the through and hot switching paths. The ADRF5054 requires dual-supply voltages of ±3.3 V. The ADRF5054 employs complementary metal-oxide semiconductor (CMOS)- and low voltage transistor logic (LVTTL)-compatible control.The ADRF5054 can also operate with a single positive supply voltage (VDD) applied while the negative supply voltage (VSS) is tied to ground. In this operating condition, the small signal performance is maintained while the switching characteristics, linearity, and power handling performance are derated (see Table 2 in the data sheet for more details).The ADRF5054 comes in a 24-terminal, 3 mm × 3 mm, RoHS compliant, land grid array (LGA) package and can operate from −40°C to +105°C.APPLICATIONSIndustrial ScannerTest instrumentationCellular Infrastructure – mmWave 5GMilitary radios, radars, and electronic counter measures (ECMs)Microwave radios and very small aperture terminals (VSATs) |
ADRF5080Reflective, Silicon SP8T Switch, 100 MHz to 20 GHz | RF Switches | 2 | Active | The ADRF5080 is a reflective, SP8T switch manufactured in the silicon process. The ADRF5080 operates from 100 MHz to 20 GHz with an insertion loss of lower than 2.0 dB and an isolation higher than 40 dB. The device has an RF input power handling capability of 30 dBm continuous wave power for the insertion loss path.The ADRF5080 operates with a dual-supply voltage, +3.3 V and −3.3 V. The device can also operate with a single-supply voltage (VDD) applied while the negative supply pin (VSS) is tied to ground. The single-supply operation condition requires a lower operating power while the excellent small signal performance is maintained See Table 2 in the data sheet for details.The ADRF5080 employs complementary metal-oxide semiconductor (CMOS)-/low voltage transistor to transistor logic (LVTTL)-compatible controls.The ADRF5080 comes in a 36-terminal, 5.50 mm × 5.50 mm, RoHS compliant, land grid array (LGA) package and can operate from −40°C to +105°C.ApplicationsTest and instrumentationMilitary radios, radars, and electronic counter measures (ECMs)Microwave radios and very small aperture terminals (VSATs) |
| RF Switches | 1 | Active | |
ADRF5132High Power, 20 W Peak, Silicon SPDT, Reflective Switch, 0.7 GHz to 5.0 GHz | RF Switches | 3 | Active | The ADRF5132 is a high power, reflective, 0.7 GHz to 5.0 GHz, silicon, single-pole, double-throw (SPDT) reflective switch in a leadless, surface-mount package. The switch is ideal for high power and cellular infrastructure applications, like long-term evolution (LTE) base stations. The ADRF5132 has high power handling of 35 dBm LTE (average typical at 105°C), a low insertion loss of 0.6 dB at 2.7 GHz, input third-order intercept of 65 dBm (typical), and 0.1 dB compression (P0.1dB) of 42.5 dBm.The on-chip circuitry operates at a single, positive supply voltage of 5 V and a typical supply current of 1.1 mA typical, making the ADRF5132 an ideal alternative to pin diode-based switches.The device is in a RoHS compliant, compact, 16-lead, 3 mm × 3 mm LFCSP package.ApplicationsCellular/4G infrastructureWireless infrastructureMilitary and high reliability applicationsTest equipmentPin diode replacement |
ADRF5141Silicon, Transmit and Receive Switch with Limiter, 6 GHz to 12 GHz | Development Boards, Kits, Programmers | 3 | Active | The ADRF5141 is a reflective, SPDT switch manufactured in the silicon process. The ADRF5141 is used in transmit and receive applications with an integrated power limiter on the receive path.The ADRF5141 operates from 6 GHz to 12 GHz. The RX arm with the integrated power limiter has a flat leakage of 17 dBm with a low insertion loss of 1.4 dB at 8 GHz to 11 GHz. The TX arm has an insertion loss of 0.9 dB at 8 GHz to 11 GHz.The ADRF5141 draws a low current of 13 μA on the positive supply of +3.3 V and 360 μA on the negative supply of −3.3 V. The device employs complementary metal-oxide semiconductor (CMOS)-/low voltage transistor to transistor logic (LVTTL)-compatible controls. The ADRF5141 requires no additional driver circuitry, making it an ideal alternative to gallium nitride (GaN) and PIN diode-based switches.The ADRF5141 comes in a 20-lead, 3.0 mm × 3.0 mm, RoHS-compliant, land grid array (LGA) package and can operate from −40°C to +105°C.APPLICATIONSX-band communications and radarsElectronic warfareSatellite communicationsGaN and PIN diode replacement |
ADRF5142High Power, 40 W Peak, Silicon SPDT, Reflective Switch, 8 GHz to 11 GHz | RF Switches | 2 | Active | The ADRF5142 is a reflective single-pole, double-throw (SPDT) switch manufactured in the silicon process.The ADRF5142 operates from 8 GHz to 11 GHz with a 1.2 dB typical insertion loss and a 40 dB typical isolation. The device has a radio frequency (RF) input power handling capability of 41 dBm average power and 46 dBm peak power for the insertion loss path.The ADRF5142 draws a low current of 130 μA on the positive supply of +3.3 V and 500 μA on negative supply of −3.3 V. The device employs complementary metal-oxide semiconductor (CMOS)-/lowvoltage transistor to transistor logic (LVTTL)-compatible controls. The ADRF5142 requires no additional driver circuitry, which makes it an ideal alternative to GaN and PIN diode-based switches.The ADRF5142 comes in a 20-lead, 3.0 mm × 3.0 mm, RoHS-compliant, land grid array (LGA) package and operates from −40°C to +85°C. |
ADRF514410 W Average, Silicon SPDT, Reflective Switch, 1 GHz to 20 GHz | RF and Wireless | 2 | Active | The ADRF5144 is a reflective, single pole double-throw (SPDT) switch manufactured in the silicon process.The ADRF5144 operates from 1 GHz to 20 GHz with typical insertion loss of 0.8 dB and typical isolation of 52 dB. The device has a radio frequency (RF) input power handling capability of 40 dBm average power and 44 dBm peak power for the insertion loss path.The ADRF5144 draws a low current of 130 μA on the positive supply of +3.3 V and 510 μA on negative supply of −3.3 V. The device employs complementary metal-oxide semiconductor (CMOS)-/low-voltage transistor to transistor logic (LVTTL)-compatible controls. The ADRF5144 requires no additional driver circuitry, which makes it an ideal alternative to GaN and PIN diode-based switches.The ADRF5144 can also operate with a single positive supply voltage (VDD) applied while the negative supply voltage (VSS) is tied to ground. In this operating condition, the small signal performance is maintained while the switching characteristics, linearity, and power handling performance are derated, see Table 2 in the data sheet.The ADRF5144 comes in a 20-lead, 3.0 mm × 3.0 mm, RoHS-compliant, land grid array (LGA) package and can operate from −40°C to +85°C.APPLICATIONSMilitary radios, radars, and electronic counter measuresSatcomTest instrumentationGaN and PIN diode replacement |
ADRF5160High Power, 88 W Peak, Silicon SPDT, Reflective Switch, 0.7 GHz to 4.0 GHz | Evaluation Boards | 3 | Active | The ADRF5160 is a silicon-based, high power, 0.7 GHz to 4.0 GHz, silicon, single-pole, double-throw (SPDT) reflective switch in a leadless, surface-mount package. The switch is ideal for high power and cellular infrastructure applications, such as long-term evolution (LTE) base stations. The ADRF5160 has high power handling of 41 dBm (8 dB PAR LTE, long-term (>10 years) average typical), a low insertion loss of 0.7 dB typical to 2.0 GHz, an input third-order intercept (IP3) of 70 dBm (typical), and a 0.1 dB compression point (P0.1dB) of 47 dBm. On-chip circuitry operates at a single positive supply voltage of 5 V at a typical supply current of 1.1 mA, making the ADRF5160 an ideal alternative to pin diode-based switches.The ADRF5160 comes in a RoHS compliant, compact 32-lead, 5 mm × 5 mm LFCSP.ApplicationsWireless infrastructureMilitary and high reliability applicationsTest equipmentPin diode replacement |
