Analog Devices Inc./Maxim Integrated

The ADPA1106 is a gallium nitride (GaN), broadband power amplifier that delivers 46 dBm (40 W) with 56% typical power added efficiency (PAE) across a bandwidth of 2.7 GHz to 3.1 GHz. The ADPA1106 has a gain flatness of ±0.15 dB across the 2.7 GHz to 3.1 GHz frequency range.The ADPA1106 is ideal for pulsed applications such as marine, weather, and military radar.The ADPA1106 comes in a 32-lead, lead frame chip scale package, premolded cavity (LFCSP_CAV) and is specified for operation from −40°C to +85°C.APPLICATIONSWeather radarMarine radarMilitary radar

The ADPA1107 is a gallium nitride (GaN), broadband power amplifier, delivering 45.0 dBm (35 W) with 56.5% typical power added efficiency (PAE) across a bandwidth of 4.8 GHz to 6.0 GHz. The ADPA1107 provides ±0.5 dB gain flatness from 5.4 GHz to 6.0 GHz.The ADPA1107 is ideal for pulsed applications such as radar, public mobile radio, and general-purpose amplification.The ADPA1107 is housed in a 40-lead, 6 mm × 6 mm, lead frame chip scale package (LFCSP).APPLICATIONSWeather radarsMarine radarsMilitary radars

The ADPA1113 is a gallium nitride (GaN), broadband power amplifier delivering 46.5 dBm (44.7 W) with 39.0% power added efficiency (PAE) from 2.3 GHz to 5.7 GHz. No external matching or AC-coupling are required to achieve full-band operation. Additionally, no external inductor is required to bias the amplifier.The ADPA1113 is ideal for continuous wave applications, such as military jammers and radars.APPLICATIONSMilitary jammersCommercial and military radarsTest and measurement equipment

The ADPA1116 is a 0.3 GHz to 6 GHz power amplifier with a saturated output power (POUT) of 39.5 dBm, power added efficiency (PAE) of 40%, and a power gain of 23.5 dB typical from 0.5 GHz to 5 GHz at an input power (PIN) of 16.0 dBm. The RF input and RF output are internally matched and AC-coupled. A drain bias voltage of 28 V is applied to the VDD1 and VDD2 pins, which have integrated bias inductors. The drain current is set by applying a negative voltage to the VGG1 pin.The ADPA1116 is fabricated on a gallium nitride (GaN) process, is housed in a 32-lead lead frame chip scale package, premolded cavity [LFCSP_CAV], and is specified for operation from −40°C to +85°C.

The ADPA7002CHIP is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), distributed power amplifier that operates from 20 GHz to 44 GHz. The amplifier provides 15 dB of small signal gain, 28 dBm output power at 1 dB gain compression (P1dB), and a typical output third-order intercept (IP3) of 40 dBm. The amplifier requires 600 mA from a 5 V supply on VDD2A, VDD2B, and VDD1. The ADPA7002CHIP also features inputs/outputs (I/Os) that are internally matched to 50 Ω, and facilitates integration into multichip modules (MCMs). All data is taken with the on substrate chip connected via two wire bonds that are 0.025 mm (1 mil) wide and 0.31 mm (12 mils) long.ApplicationsMilitary and spaceTest instrumentation

The ADPA7004CHIPS is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), balanced medium power amplifier, with an integrated temperature compensated on-chip power detector that operates from 40 GHz to 80 GHz. In the lower band of 40 GHz to 45 GHz, the ADPA7004CHIPS provides a gain of 17 dB typical, an output third-order intercept (IP3) of 30.5 dBm, and output power for 1 dB gain compression (P1dB) of 21.5 dBm. In the upper band of 75 GHz to 80 GHz, the ADPA7004CHIPS provides a gain of 16 dB (typical), an output IP3 of 31.5 dBm, and an output P1dB of 20.5 dBm. The ADPA7004CHIPS requires 550 mA from a 3.5 V supply. The ADPA7004CHIPS amplifier input and output are internally matched to 50 Ω, facilitating integration into multichip modules (MCMs). All data is taken with the RFIN and RFOUT pads connected via one 0.076 mm (3 mil) ribbon bond of 0.076 mm (3 mil) minimal length.APPLICATIONSTest instrumentationMilitary and spaceTelecommunications infrastructure

The ADPA7006CHIP is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), distributed power amplifier that operates from 18 GHz to 44 GHz. The amplifier provides 23.5 dB of small signal gain, 29 dBm output power for 1 dB compression, and a typical output third-order intercept of 38 dBm. The ADPA7006CHIP requires 800 mA from a 5 V supply on the supply voltage (VDD), and features inputs and outputs that are internally matched to 50 Ω, facilitating integration in multichip modules (MCMs). All data is taken with the chip connected via two 0.025 mm wire bonds that are less than 0.31 mm long.ApplicationsMilitary and spaceTest instrumentationCommunications