ADPA1116 Series

0.3 GHz to 6 GHz, 39.5 dBm, GaN Power Amplifier

Manufacturer: Analog Devices Inc./Maxim Integrated

Catalog

0.3 GHz to 6 GHz, 39.5 dBm, GaN Power Amplifier

Part	RF Type	Gain	Mounting Type	Voltage - Supply	Test Frequency (Minimum)	Test Frequency (Maximum)	Current - Supply	Package Name	Package Length	Package Width	Package / Case	Frequency (Min)	Frequency (Max)
Analog Devices Inc./Maxim Integrated ADPA1116ACGZN-R7	Radar	33 dB	Surface Mount	28 V	500 MHz	5 GHz	300 mA	32-LFCSP-CAV	5 mm	5 mm	32-LFQFN Exposed Pad CSP	300 MHz	6 GHz
Analog Devices Inc./Maxim Integrated ADPA1116ACGZN	Radar	33 dB	Surface Mount	28 V	500 MHz	5 GHz	300 mA	32-LFCSP-CAV	5 mm	5 mm	32-LFQFN Exposed Pad CSP	300 MHz	6 GHz

Catalog

0.3 GHz to 6 GHz, 39.5 dBm, GaN Power Amplifier

Description

The ADPA1116 is a 0.3 GHz to 6 GHz power amplifier with a saturated output power (POUT) of 39.5 dBm, power added efficiency (PAE) of 40%, and a power gain of 23.5 dB typical from 0.5 GHz to 5 GHz at an input power (PIN) of 16.0 dBm. The RF input and RF output are internally matched and AC-coupled. A drain bias voltage of 28 V is applied to the VDD1 and VDD2 pins, which have integrated bias inductors. The drain current is set by applying a negative voltage to the VGG1 pin.The ADPA1116 is fabricated on a gallium nitride (GaN) process, is housed in a 32-lead lead frame chip scale package, premolded cavity [LFCSP_CAV], and is specified for operation from −40°C to +85°C.