Specification	FJAF4210OTU

Current - Collector Cutoff (Max) [Max]	10 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	70
Frequency - Transition	30 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-3P-3 Full Pack
Power - Max [Max]	80 W
Supplier Device Package	TO-3PF
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max)	140 V

FJAF4210 Series

PNP Epitaxial Silicon Transistor

Part	Transistor Type	Mounting Type	Operating Temperature	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic	Package / Case	Power - Max [Max]	Frequency - Transition	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]
ON Semiconductor FJAF4210OTU	PNP	Through Hole	150 °C	TO-3PF	500 mV	TO-3P-3 Full Pack	80 W	30 MHz	10 µA	140 V	70
ON Semiconductor FJAF4210YTU	PNP	Through Hole	150 °C	TO-3PF	500 mV	TO-3P-3 Full Pack	80 W	30 MHz	10 µA	140 V	90
ON Semiconductor FJAF4210OTU	PNP	Through Hole	150 °C	TO-3PF	500 mV	TO-3P-3 Full Pack	80 W	30 MHz	10 µA	140 V	70
ON Semiconductor FJAF4210YTU	PNP	Through Hole	150 °C	TO-3PF	500 mV	TO-3P-3 Full Pack	80 W	30 MHz	10 µA	140 V	90
ON Semiconductor FJAF4210RTU	PNP	Through Hole	150 °C	TO-3PF	500 mV	TO-3P-3 Full Pack	80 W	30 MHz	10 µA	140 V	50 hFE

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

PNP Epitaxial Silicon Transistor

Technical documentation and resources