Specification	FJAF4210RTU

Current - Collector Cutoff (Max) [Max]	10 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	50 hFE
Frequency - Transition	30 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-3P-3 Full Pack
Power - Max [Max]	80 W
Supplier Device Package	TO-3PF
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max)	140 V

FJAF4210 Series

PNP Epitaxial Silicon Transistor

Part	Transistor Type	Mounting Type	Operating Temperature	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic	Package / Case	Power - Max [Max]	Frequency - Transition	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]
ON Semiconductor FJAF4210OTU	PNP	Through Hole	150 °C	TO-3PF	500 mV	TO-3P-3 Full Pack	80 W	30 MHz	10 µA	140 V	70
ON Semiconductor FJAF4210YTU	PNP	Through Hole	150 °C	TO-3PF	500 mV	TO-3P-3 Full Pack	80 W	30 MHz	10 µA	140 V	90
ON Semiconductor FJAF4210OTU	PNP	Through Hole	150 °C	TO-3PF	500 mV	TO-3P-3 Full Pack	80 W	30 MHz	10 µA	140 V	70
ON Semiconductor FJAF4210YTU	PNP	Through Hole	150 °C	TO-3PF	500 mV	TO-3P-3 Full Pack	80 W	30 MHz	10 µA	140 V	90
ON Semiconductor FJAF4210RTU	PNP	Through Hole	150 °C	TO-3PF	500 mV	TO-3P-3 Full Pack	80 W	30 MHz	10 µA	140 V	50 hFE

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

PNP Epitaxial Silicon Transistor

Technical documentation and resources