Specification	FDD6635

Current - Continuous Drain (Id) @ 25°C	15 A, 59 A
Drain to Source Voltage (Vdss)	35 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	36 nC
Input Capacitance (Ciss) (Max) @ Vds	1400 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	55 W, 3.8 W
Rds On (Max) @ Id, Vgs	10 mOhm
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

FDD6637 Series

P-Channel PowerTrench® MOSFET, 35V, -55A, 11.6mΩ

Part	Vgs(th) (Max) @ Id	Supplier Device Package	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Rds On (Max) @ Id, Vgs	FET Type	Mounting Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs
ON Semiconductor FDD6637	3 V	TO-252AA	MOSFET (Metal Oxide)	-55 °C	150 °C 155 °C	4.5 V 10 V	2370 pF	3.1 W 57 W	DPAK (2 Leads + Tab) SC-63 TO-252-3	63 nC	25 V	11.6 mOhm	P-Channel	Surface Mount	35 V	13 A 55 A
ON Semiconductor FDD6635	3 V	TO-252AA	MOSFET (Metal Oxide)	-55 °C	150 °C	4.5 V 10 V	1400 pF	3.8 W 55 W	DPAK (2 Leads + Tab) SC-63 TO-252-3		20 V	10 mOhm	N-Channel	Surface Mount	35 V	15 A 59 A	36 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FDD6637 Series

This N-Channel MOSFET has been produced using a proprietary PowerTrench®technology to deliver low RDS(on)and optimized BVdsscapability to offer superior performance benefit in the applications.