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TO-252AA
Discrete Semiconductor Products

FDD6637

Active
ON Semiconductor

POWER MOSFET, P CHANNEL, 35 V, 13 A, 0.0097 OHM, TO-252 (DPAK), SURFACE MOUNT

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TO-252AA
Discrete Semiconductor Products

FDD6637

Active
ON Semiconductor

POWER MOSFET, P CHANNEL, 35 V, 13 A, 0.0097 OHM, TO-252 (DPAK), SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

SpecificationFDD6637
Current - Continuous Drain (Id) @ 25°C55 A, 13 A
Drain to Source Voltage (Vdss)35 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]63 nC
Input Capacitance (Ciss) (Max) @ Vds2370 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C, 155 °C
Operating Temperature [Min]-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)3.1 W, 57 W
Rds On (Max) @ Id, Vgs11.6 mOhm
Supplier Device PackageTO-252AA
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.57
10$ 1.28
100$ 1.00
500$ 0.85
1000$ 0.69
Digi-Reel® 1$ 1.57
10$ 1.28
100$ 1.00
500$ 0.85
1000$ 0.69
Tape & Reel (TR) 2500$ 0.65
5000$ 0.62
12500$ 0.59
NewarkEach (Supplied on Full Reel) 1$ 0.81
3000$ 0.78
6000$ 0.71
12000$ 0.64
18000$ 0.61
30000$ 0.60
ON SemiconductorN/A 1$ 0.63

Description

General part information

FDD6637 Series

This N-Channel MOSFET has been produced using a proprietary PowerTrench®technology to deliver low RDS(on)and optimized BVdsscapability to offer superior performance benefit in the applications.