FDD6637 Series

P-Channel PowerTrench® MOSFET, 35V, -55A, 11.6mΩ

Catalog

P-Channel PowerTrench® MOSFET, 35V, -55A, 11.6mΩ

Part	Vgs(th) (Max) @ Id	Supplier Device Package	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Rds On (Max) @ Id, Vgs	FET Type	Mounting Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs
ON Semiconductor FDD6637	3 V	TO-252AA	MOSFET (Metal Oxide)	-55 °C	150 °C 155 °C	4.5 V 10 V	2370 pF	3.1 W 57 W	DPAK (2 Leads + Tab) SC-63 TO-252-3	63 nC	25 V	11.6 mOhm	P-Channel	Surface Mount	35 V	13 A 55 A
ON Semiconductor FDD6635	3 V	TO-252AA	MOSFET (Metal Oxide)	-55 °C	150 °C	4.5 V 10 V	1400 pF	3.8 W 55 W	DPAK (2 Leads + Tab) SC-63 TO-252-3		20 V	10 mOhm	N-Channel	Surface Mount	35 V	15 A 59 A	36 nC

Catalog

P-Channel PowerTrench® MOSFET, 35V, -55A, 11.6mΩ

Key Features

-55 A, -35 V

• RDS(ON)= 11.6 mΩ @ VGS= -10 V

• RDS(ON)= 18 mΩ @ VGS= -4.5 V

• High performance trench technology for extremely low RDS(ON)

• RoHS Compliant

Description

This N-Channel MOSFET has been produced using a proprietary PowerTrench®technology to deliver low RDS(on)and optimized BVdsscapability to offer superior performance benefit in the applications.